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Showing items 1-10 of 35 (4 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:49:20Z |
Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs
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Jong, FC; Huang, TY; Chao, TS; Lin, HC; Wang, MF; Chang, CY |
| 國立交通大學 |
2014-12-08T15:49:16Z |
Evaluation of plasma charging damage in ultrathin gate oxides
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Lin, HC; Chen, CC; Chien, CH; Hsein, SK; Wang, MF; Chao, TS; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:47:03Z |
The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors
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Wang, MF; Chien, CH; Chao, TS; Lin, HC; Jong, FC; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:47Z |
Oxide thickness dependence of plasma charging damage
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Lin, HC; Chen, CC; Wang, MF; Hsien, SK; Chien, CH; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:40Z |
Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process
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Lei, TF; Chen, JH; Wang, MF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:45:00Z |
Characteristics of polysilicon oxides combining N2O nitridation and CMP processes
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Lei, TF; Chen, JH; Wang, MF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:42:51Z |
Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate
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Wang, MF; Huang, TY; Kao, YC; Lin, HC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:42:37Z |
Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage
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Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH |
| 國立交通大學 |
2014-12-08T15:42:20Z |
Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor
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Lin, HC; Wang, MF; Hou, FJ; Liu, JT; Huang, TY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:57Z |
Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique
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Hung, CC; Lin, HC; Wang, MF; Huang, TY; Shih, HC |
Showing items 1-10 of 35 (4 Page(s) Totally)
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