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Showing items 101-110 of 322 (33 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:44:11Z |
Diode-end-pumped passively mode-locked high-power Nd : YVO4 laser with a relaxed saturable Bragg reflector
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Chen, YF; Tsai, SW; Lan, YP; Wang, SC; Huang, KF |
| 國立交通大學 |
2014-12-08T15:44:06Z |
High-power diode-pumped nonlinear mirror mode-locked Nd : YVO4 laser with periodically-poled KTP
|
Chen, YF; Tsai, SW; Wang, SC |
| 國立交通大學 |
2014-12-08T15:43:53Z |
Beryllium-implanted P-type GaN with high carrier concentration
|
Yu, CC; Chu, CF; Tsai, JY; Lin, CF; Lan, WH; Chiang, CI; Wang, SC |
| 國立交通大學 |
2014-12-08T15:43:50Z |
High etching rate of GaN films by KrF excimer laser
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Chu, CF; Lee, CK; Yu, CC; Wang, YK; Tasi, JY; Yang, CR; Wang, SC |
| 國立交通大學 |
2014-12-08T15:43:50Z |
Investigation of beryllium implanted P-type GaN
|
Yu, CC; Chu, CF; Tsai, JY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:43:34Z |
A diode-pumped high power Q-switched and self-mode-locked Nd : YVO4 laser with a LiF : F-2(-) saturable absorber
|
Chen, YF; Tsai, SW; Wang, SC; Chen, J |
| 國立交通大學 |
2014-12-08T15:43:12Z |
Simultaneous mode locking in a diode-pumped passively Q-switched Nd : YVO4 laser with a GaAs saturable absorber
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Chen, YF; Huang, KF; Tsai, SW; Lan, YP; Wang, SC; Chen, J |
| 國立交通大學 |
2014-12-08T15:43:11Z |
Simultaneous observation of second-harmonic emission and three-photon excited photoluminescence from hybrid vapor phase epitaxy-grown GaN film
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Lee, CK; Kao, FJ; Wang, SC; Pan, CL |
| 國立交通大學 |
2014-12-08T15:42:38Z |
Real index-guided InGaAlP red lasers with buried tunnel junctions
|
Lu, TC; Shieh, HM; Wang, SC |
| 國立交通大學 |
2014-12-08T15:42:37Z |
Comparison of high-resistivity ZnO films sputtered on different substrates
|
Lin, GR; Wang, SC |
Showing items 101-110 of 322 (33 Page(s) Totally)
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