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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:31Z |
A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology
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Weng, Wu-Te; Lee, Yao-Jen; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-12T03:03:03Z |
電漿製程導致先進互補式金氧半場效電晶體可靠度損壞之研究
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翁武得; Weng, Wu-Te; 黃調元; 林鴻志; Huang, Tiao-Yuan; Lin, Horng-Chih |
| 國立交通大學 |
2014-12-08T15:09:04Z |
Effects of Plasma Damage on Metal-insulator-Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal-Oxide-Semiconductor Field-Effect Transistor Technology
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Weng, Wu-Te; Lee, Yao-Jen; Lin, Hong-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:07:08Z |
A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO(2)/poly-gate complementary metal oxide semiconductor technology
|
Weng, Wu-Te; Lee, Yao-Jen; Lin, Horng-Chih; Huang, Tiao-Yuan |
Showing items 1-4 of 4 (1 Page(s) Totally)
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