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Showing items 16-25 of 39 (4 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:04:04Z |
PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES
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CHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, JW |
| 國立交通大學 |
2014-12-08T15:03:58Z |
ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS
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CHEN, HD; FENG, MS; LIN, KC; CHEN, PA; WU, CC; WU, JW |
| 國立交通大學 |
2014-12-08T15:03:56Z |
CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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WU, JW; CHANG, CY; LIN, KC; CHAN, SH; CHEN, HD; CHEN, PA; CHANG, EY; KUO, MS |
| 國立交通大學 |
2014-12-08T15:03:41Z |
PASSIVATION OF GAAS POWER FIELD-EFFECT TRANSISTOR USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE TECHNIQUE
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CHANG, EY; LIN, KC; WU, JW; CHEN, TH; CHEN, JS; WANG, SP |
| 國立交通大學 |
2014-12-08T15:03:32Z |
THE THERMAL-STABILITY OF OHMIC CONTACT TO N-TYPE INGAAS LAYER
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WU, JW; CHANG, CY; LIN, KC; CHANG, EY; CHEN, JS; LEE, CT |
| 國立交通大學 |
2014-12-08T15:03:27Z |
REACTIVE ION ETCHING OF GAINP, GAAS, AND ALGAAS
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WU, JW; CHANG, CY; CHANG, EY; CHANG, SH; LIN, KC |
| 國立交通大學 |
2014-12-08T15:03:17Z |
BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR
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LIN, KC; CHANG, CY; WU, CC; CHEN, HD; CHEN, PA; CHAN, SH; WU, JW; CHANG, EY |
| 國立交通大學 |
2014-12-08T15:03:12Z |
SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS |
| 國立交通大學 |
2014-12-08T15:03:03Z |
Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor deposition
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Wang, CJ; Feng, MS; Chan, SH; Wu, JW; Chang, CY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:02:45Z |
High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5P
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Chai, CY; Wu, JW; Guo, JD; Huang, JA; Lai, YL; Chan, SH; Chang, CY; Chan, YJ; Cheng, HC |
Showing items 16-25 of 39 (4 Page(s) Totally)
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