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總筆數 :2856713
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53840404
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1000
教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"wu ycs"的相關文件
顯示項目 11-20 / 21 (共3頁)
<< < 1 2 3 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:37:06Z |
Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures
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Liu, PC; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Low temperature polycrystalline silicon thin film transistors fabricated by electroless plating Ni induced crystallization of amorphous Si
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Chao, CW; Wu, YCS; Chen, YC; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:17Z |
The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon
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Lin, YD; Wu, YCS; Chao, CW; Hu, GR |
| 國立交通大學 |
2014-12-08T15:26:17Z |
The effects of Pd2Si on the electroless plating Pd induced crystallization of amorphous silicon thin films
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Huang, CTJ; Hu, GR; Wu, YCS; Chao, CW |
| 國立交通大學 |
2014-12-08T15:26:16Z |
Wafer bonding using indium tin oxide intermediate layer for high brightness LEDs
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Liu, PC; Hou, CY; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:19:18Z |
Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers
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Liu, PC; Hou, CY; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:18:15Z |
Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon
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Hou, CY; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:18:15Z |
Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes
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Hsu, CY; Lan, WH; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:17:51Z |
The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDs
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Hsu, CY; Lan, WH; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:17:35Z |
A simple method for gettering of nickel within the Ni-metal-induced lateral crystallization polycrystalline silicon film
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Hou, CY; Wu, YCS |
顯示項目 11-20 / 21 (共3頁)
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