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Showing items 11-21 of 21 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:37:06Z |
Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures
|
Liu, PC; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Low temperature polycrystalline silicon thin film transistors fabricated by electroless plating Ni induced crystallization of amorphous Si
|
Chao, CW; Wu, YCS; Chen, YC; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:17Z |
The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon
|
Lin, YD; Wu, YCS; Chao, CW; Hu, GR |
| 國立交通大學 |
2014-12-08T15:26:17Z |
The effects of Pd2Si on the electroless plating Pd induced crystallization of amorphous silicon thin films
|
Huang, CTJ; Hu, GR; Wu, YCS; Chao, CW |
| 國立交通大學 |
2014-12-08T15:26:16Z |
Wafer bonding using indium tin oxide intermediate layer for high brightness LEDs
|
Liu, PC; Hou, CY; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:19:18Z |
Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers
|
Liu, PC; Hou, CY; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:18:15Z |
Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon
|
Hou, CY; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:18:15Z |
Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes
|
Hsu, CY; Lan, WH; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:17:51Z |
The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDs
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Hsu, CY; Lan, WH; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:17:35Z |
A simple method for gettering of nickel within the Ni-metal-induced lateral crystallization polycrystalline silicon film
|
Hou, CY; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:17:05Z |
Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers
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Hao, OY; Wu, YCS; Chiou, HH; Liu, CC; Cheng, JH; Wen, OY; Chiou, SH; Shiue, ST; Chueh, YL; Chou, LJ |
Showing items 11-21 of 21 (1 Page(s) Totally)
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