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"wu yh"的相關文件
顯示項目 56-65 / 117 (共12頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:46:38Z |
Improved electrical characteristics of CoSi2 using HF-vapor pretreatment
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Wu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C |
| 國立交通大學 |
2014-12-08T15:46:25Z |
Improved electrical characteristics of CoSi2 using HF-vapor pretreatment
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Wu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C |
| 國立交通大學 |
2014-12-08T15:45:36Z |
Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7
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Wu, YH; Chin, A |
| 國立交通大學 |
2014-12-08T15:45:20Z |
High-quality thermal oxide grown on high-temperature-formed SiGe
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Wu, YH; Chen, SB; Chin, A; Chen, WJ |
| 國立交通大學 |
2014-12-08T15:45:14Z |
Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe
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Wu, YH; Chin, A; Chen, WJ |
| 國立交通大學 |
2014-12-08T15:45:09Z |
The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding
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Wu, YH; Huang, CH; Chen, WJ; Lin, CN; Chin, A |
| 國立交通大學 |
2014-12-08T15:45:06Z |
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom
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Wu, YH; Yang, MY; Chin, A; Chen, WJ; Kwei, CM |
| 國立交通大學 |
2014-12-08T15:45:06Z |
High temperature formed SiGeP-MOSFET's with good device characteristics
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Wu, YH; Chin, A |
| 國立交通大學 |
2014-12-08T15:44:51Z |
Fabrication of very high resistivity Si with low loss and cross talk
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Wu, YH; Chin, A; Shih, KH; Wu, CC; Liao, CP; Pai, SC; Chi, CC |
| 國立交通大學 |
2014-12-08T15:44:42Z |
The effect of copper on gate oxide integrity
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Lin, YH; Wu, YH; Chin, A; Pan, FM |
顯示項目 56-65 / 117 (共12頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
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