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"yang chung i"的相關文件
顯示項目 1-7 / 7 (共1頁)
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| 國立交通大學 |
2018-08-21T05:53:58Z |
The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors (vol 110, 103502, 2017)
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Su, Wan-Ching; Chang, Ting-Chang; Liao, Po-Yung; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-I; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; Chang, Kuan-Chang; Tsai, Tsung-Ming |
| 國立交通大學 |
2018-08-21T05:53:54Z |
Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors
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Chen, Bo-Wei; Chang, Ting-Chang; Chang, Kuan-Chang; Hung, Yu-Ju; Huang, Shin-Pin; Chen, Hua-Mao; Liao, Po-Yung; Lin, Yu-Ho; Huang, Hui-Chun; Chiang, Hsiao-Cheng; Yang, Chung-I; Zheng, Yu-Zhe; Chu, Ann-Kuo; Li, Hung-Wei; Tsai, Chih-Hung; Lu, Hsueh-Hsing; Wang, Terry Tai-Jui; Chang, Tsu-Chiang |
| 國立交通大學 |
2018-08-21T05:53:53Z |
The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors
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Su, Wan-Ching; Chang, Ting-Chang; Liao, Po-Yung; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-I; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; Chang, Kuan-Chang; Tsai, Tsung-Ming |
| 國立交通大學 |
2018-08-21T05:53:47Z |
Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors
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Yang, Chung-I.; Chang, Ting-Chang; Liao, Po-Yung; Chen, Li-Hui; Chen, Bo-Wei; Chou, Wu-Ching; Chen, Guan-Fu; Lin, Sung-Chun; Yeh, Cheng-Yen; Tsai, Cheng-Ming; Yu, Ming-Chang; Zhang, Shengdong |
| 國立交通大學 |
2018-08-21T05:53:13Z |
Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors
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Yang, Chung-I; Chang, Ting-Chang; Liao, Po-Yung; Chen, Bo-Wei; Chou, Wu-Ching; Chen, Guan-Fu; Huang, Shin-Ping; Zheng, Yu-Zhe; Wang, Yu-Xuan; Liu, Hsi-Wen; Lin, Chien-Yu; Lin, Yu-Shan; Lu, Ying-Hsin; Zhang, Shengdong |
| 國立交通大學 |
2018-08-21T05:52:56Z |
Investigating degradation behaviors induced by hot carriers in the etch stop layer in amorphous InGaZnO thin film transistors with different electrode materials and structures
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Yang, Chung-I; Chang, Ting-Chang; Chen, Bo-Wei; Chou, Wu-Ching; Liao, Po-Yung; Lin, Sung-Chun; Yeh, Cheng-Yen; Chang, Chia-Sen; Tsai, Cheng-Ming; Yu, Ming-Chang |
| 國立交通大學 |
2018-08-21T05:52:40Z |
Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors
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Chiang, Hsiao-Cheng; Chang, Ting-Chang; Liao, Po-Yung; Chen, Bo-Wei; Tsao, Yu-Ching; Tsai, Tsung-Ming; Chien, Yu-Chieh; Yang, Yi-Chieh; Chen, Kuan-Fu; Yang, Chung-I; Hung, Yu-Ju; Chang, Kuan-Chang; Zhang, Sheng-Dong; Lin, Sung-Chun; Yeh, Cheng-Yen |
顯示項目 1-7 / 7 (共1頁)
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