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Taiwan Academic Institutional Repository >
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"yang ming jui"
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| 國立成功大學 |
2021-06-07 |
都市熱島指標評估系統之建立及應用
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楊明叡; Yang, Ming-Jui |
| 國立交通大學 |
2019-04-02T06:01:05Z |
Effects of HfO2 buffer layer thickness on the properties of Pt/SrBi2Ta2O9//HfO2/Si structure
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Leu, Ching-Chich; Lin, Chen-Han; Chien, Chao-Hsin; Yang, Ming-Jui |
| 國立交通大學 |
2017-04-21T06:49:32Z |
Reliability Study of MANOS with and without a SiO2 Buffer Layer and BE-MANOS Charge-Trapping NAND Flash Devices
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Liao, Chien-Wei; Lai, Sheng-Chih; Lue, Hang-Ting; Yang, Ming-Jui; Shen, Chin-Yen; Lue, Yi-Hsien; Huang, Yu-Fong; Hsieh, Jung-Yu; Wang, Szu-Yu; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:56Z |
An oxide-buffered BE-MANOS charge-trapping device and the role of Al2O3
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Lai, Sheng-Chih; Lue, Hang-Ting; Liao, Chien-Wei; Huang, Yu-Fong; Yang, Ming-Jui; Lue, Yi-Hsien; Wu, Tai-Bor; Hsieh, Jung-Yu; Wang, Szu-Yu; Hong, Shih-Ping; Hsu, Fang-Hao; Shen, Chih-Yen; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuan-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:54Z |
Highly reliable MA BE-SONOS (Metal-Al2O3 bandgap engineered SONOS) using a SiO2 buffer layer
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Lai, Sheng-Chih; Lue, Hang-Ting; Liao, Chien-Wei; Wu, Tai-Bor; Yang, Ming-Jui; Lue, Yi-Hsien; Hsieh, Jung-Yu; Wang, Szu-Yu; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-12T02:26:27Z |
先進材料應用於複晶矽薄膜電晶體之研究
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楊明瑞; Yang, Ming-Jui; 簡昭欣; 黃調元; Chien, Chao-Hsin; Huang, Tiao-Tuan |
| 國立交通大學 |
2014-12-08T15:38:10Z |
High-Performance Poly-Si TFTs of Top-Gate with High-kappa Metal-Gate Combine the Laser Annealed Channel and Glass Substrate
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Lu, Yi-Hsien; Chien, Chao-Hsin; Kuo, Po-Yi; Yang, Ming-Jui; Lin, Hsiao-Yi; Chao, Tien-Sheng |
| 國立交通大學 |
2014-12-08T15:15:07Z |
Properties of Pt/SrBi2Ta2O9/BL/Si MFIS structures containing HfO2, SiO2, and Si3N4 buffer layers
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Leu, Ching-Chich; Leu, Chia-Feng; Chien, Chao-Hsin; Yang, Ming-Jui; Huang, Rui-Hao; Lin, Chen-Han; Hsu, Fan-Yi |
| 國立交通大學 |
2014-12-08T15:13:18Z |
High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate dielectric
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Yang, Ming-Jui; Chien, Chao-Hsin; Lu, Yi-Hsien; Luo, Guang-Li; Chiu, Su-Ching; Lou, Chun-Che; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:12:50Z |
Properties of Ge films grown through inductively coupled plasma chemical vapor deposition on SiO(2) substrates
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Yang, Ming-Jui; Chien, Chao-Hsin; Shen, Chih-Yen; Huang, Tiao-Yuan |
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