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| 國立交通大學 |
2019-04-02T06:00:32Z |
Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy
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Huan, Ya-Wei; Wang, Xing-Lu; Liu, Wen-Jun; Dong, Hong; Long, Shi-Bing; Sun, Shun-Ming; Yang, Jian-Guo; Wu, Su-Dong; Yu, Wen-Jie; Horng, Ray-Hua; Xia, Chang-Tai; Yu, Hong-Yu; Lu, Hong-Liang; Sun, Qing-Qing; Ding, Shi-Jin; Zhang, David Wei |
| 國立交通大學 |
2014-12-08T15:13:09Z |
Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
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Wang, Xin Peng; Lim, Andy Eu-Jin; Yu, Hong Yu; Li, Ming-Fu; Ren, Chi; Loh, WeiYip; Zhu, Chun Xiang; Chin, Albert; Trigg, Alastair David; Yeo, Yee-Chia; Biesemans, Serge; Lo, Guo-Qiang; Kwong, Dim-Lee |
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