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| 國立成功大學 |
2010-02 |
Characteristics of an AlGaInP-Based Light Emitting Diode With an Indium-Tin-Oxide (ITO) Direct Ohmic Contact Structure
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Liu, Yi-Jung; Yen, Chih-Hung; Yu, Kuo-Hui; Lin, Pei-Ling; Chen, Li-Yang; Tsai, Tsung-Han; Tsai, Tsung-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2009-11 |
Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes
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Liu, Yi-Jung; Yen, Chih-Hung; Hsu, Chia-Hao; Yu, Kuo-Hui; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2009-08 |
Characteristics of a Low-Damage GaN-Based Light-Emitting Diode Using a KOH-Treated Wet-Etching Approach
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Liu, Yi-Jung; Yen, Chih-Hung; Yu, Kuo-Hui; Chen, Tzu-Pin; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2009-04 |
On an AlGaInP-Based Light-Emitting Diode With an ITO Direct Ohmic Contact Structure
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Yen, Chih-Hung; Liu, Yi-Jung; Yu, Kuo-Hui; Lin, Pei-Ling; Chen, Tzu-Pin; Chen, Li-Yang; Tsai, Tsung-Han; Huang, Nan-Yi; Lee, Chong-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-11 |
A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure
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Yen, Chih-Hung; Liu, Yi-Jung; Huang, Nan-Yi; Yu, Kuo-Hui; Chen, Tzu-Pin; Chen, Li-Yang; Tsai, Tsung-Han; Lee, Chong-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes
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Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Yu, Kuo-Hui; Shei, Shih-Chang; Chiou, Y. Z. |
| 國立成功大學 |
2003-01 |
On the high-performance n(+)-GaAs/p(+)-InGaP/n-GaAs high-barrier gate camel-like HFETs
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Wang, Chih-Kai; Yu, Kuo-Hui; Chiou, Wen-Hui; Chen, Chun-Yuan; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2003 |
InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor
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Chuang, Hung-Ming; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Chen, Jing-Yuh; Liu, Wen-Chau |
| 國立成功大學 |
2002-10 |
Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)
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Yu, Kuo-Hui; Chuang, Hung-Ming; Lin, Kun-Wei; Cheng, Shiou-Ying; Cheng, Chin-Chuan; Chen, Jing-Yuh; Liu, Wen-Chau |
| 國立成功大學 |
2002-06-07 |
具有改良式通道結構之異質結構場效電晶體之研製
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余國輝; Yu, Kuo-Hui |
| 國立成功大學 |
2002-06-07 |
具有改良式通道結構之異質結構場效電晶體之研製
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余國輝; Yu, Kuo-Hui |
| 國立成功大學 |
2002-05 |
Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors
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Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Wang, Ckih-Kai; Liu, Wen-Chau |
| 國立成功大學 |
2002-03 |
On the high-performance Ti-salicide ULSI CMOS devices prepared by a borderless contact technique and double-implant structure
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Thei, Kong-Beng; Chuang, Hung-Ming; Yu, Kuo-Hui; Liu, Wen-Chau; Liu, Rong-Chau; Lin, Kun-Wei; Su, Chi-Wen; Ho, Chin-Shiung; Wuu, Shou-Gwo; Wang, Chung-Shu |
| 國立成功大學 |
2002-01-17 |
Highly hydrogen-sensitive Pd/InP metaloxide-semiconductor Schottky diode hydrogen sensor
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Pan, Hsi-Jen; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Thei, Kong-Beng; Liu, Wen-Chau; Chen, Huey-Ing |
| 國立成功大學 |
2001-12 |
Investigation of temperature-dependent characteristics of an n(+)-InGaAs/n-GaAs composite doped channel HFET
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Liu, Wen-Chau; Yu, Kuo-Hui; Liu, Rong-Chau; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Thei, Kong-Beng |
| 國立成功大學 |
2001-12 |
A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor
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Lin, Kun-Wei; Cheng, Chin-Chuan; Cheng, Shiou-Ying; Yu, Kuo-Hui; Wang, Chih-Kai; Chuang, Hung-Ming; Chen, Jing-Yuh; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立成功大學 |
2001-11 |
On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations
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Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Wang, Chih-Kai; Chiou, Wen-Huei; Liu, Wen-Chau |
| 國立成功大學 |
2001-11 |
Off-state breakdown characteristics of InGaP-based high-barrier gate heterostructure field-effect transistors
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Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Shiou-Ying; Cheng, Chin-Chuan; Chen, Jing-Yuh; Wu, Cheng-Zu; Liu, Wen-Chou |
| 國立成功大學 |
2001-09 |
Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor
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Liu, Wen-Chau; Pan, Hsi-Jen; Chen, Huey-Ing; Lin, Kun-Wei; Cheng, Shiou-Ying; Yu, Kuo-Hui |
| 國立成功大學 |
2001-08-13 |
Improved n(+)-GaAs/p(+)-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications
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Liu, Wen-Chau; Yu, Kuo-Hui; Liu, Rong-Chau; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu |
| 國立成功大學 |
2001-08 |
High-performance In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (delta-PHEMT's)
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Liu, Wen-Chau; Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Cheng, Chin-Chuan; Wang, C. K.; Chang, Hong-Ming |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Wang, C. K.; Chuang, Hung-Ming |
| 國立成功大學 |
2001-08 |
On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Wu, Cheng-Zu; Lin, Kuan-Po; Yen, Chih-Hung |
| 國立成功大學 |
2001-07 |
Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/InxGa1-xAs/GaAs pseudomorphic high electron mobility transistor
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Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Cheng, Shiou-Ying |
| 國立成功大學 |
2001-06 |
On the multiple negative-differential-resistance (MNDR) InGaP/GaAs resonant tunneling bipolar transistors
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Liu, Wen-Chau; Pan, Hsi-Jen; Wang, Wei-Chou; Feng, Shun-Ching; Lin, Kun-Wei; Yu, Kuo-Hui; Laih, Lih-Wen |
Showing items 1-25 of 45 (2 Page(s) Totally)
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