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Showing items 1076-1085 of 2348570 (234857 Page(s) Totally)
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| 國立中山大學 |
2001-07-31 |
1.3-呋喃基甲基疊氮的熱裂解反應研究 2.5,6-二亞甲基-5,6-二氫化苯幷呋喃的合成與化性探討
|
林雅玫 |
| 臺大學術典藏 |
2018-09-10T04:14:56Z |
1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE
|
L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 國立臺灣科技大學 |
2017 |
1.35 GHz programmable gain amplifier for 5G mobile communication
|
Wei, Y.-L.;Chen, H.-C.;Chung, Chung C.-Y. |
| 臺大學術典藏 |
2018-09-10T04:14:57Z |
1.3m InAs/InGaAs quantum dot lasers grown by GSMBE
|
F. Y. Chang; T. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 國立中山大學 |
2001-06-20 |
1.3μm低損耗混合式抗共振反射波導
|
藍英哲 |
| 國立交通大學 |
2014-12-12T01:46:19Z |
1.3微米波段兩段式被動鎖模量子點雷射之研究
|
陳竑霖; 林國瑞 |
| 國立高雄師範大學 |
2012-02-08 |
1.4161平方公里的記憶-鹽埕地方數位敘事計畫
|
林芸竹; Yun-Jhu Lin |
| 大葉大學 |
2016-04 |
1.48-kV enhancement-mode AlGaN/GaN high electron mobility transistors fabricated on 6-in silicon by using fluoride-based plasma treatment
|
Yeh, Chih-Tung;Wang, Wei-Kai;Shen, Yi-Siang;Horng, Ray-Hua |
| 國立交通大學 |
2017-04-21T06:49:10Z |
1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
|
Yeh, Chih-Tung; Wang, Wei-Kai; Shen, Yi-Siang; Horng, Ray-Hua |
| 國立交通大學 |
2018-08-21T05:53:58Z |
1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
|
Yeh, Chih-Tung; Wang, Wei-Kai; Shen, Yi-Siang; Horng, Ray-Hua |
Showing items 1076-1085 of 2348570 (234857 Page(s) Totally)
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