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Showing items 219576-219585 of 2348487 (234849 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:02:14Z |
Band-diagonal operators
|
Fong, CK; Wu, PY |
| 國立東華大學 |
2007 |
Band-edge characteristics of layered germanium dichalcogenides
|
Wu,C.C.; Ho,Ching-Hwa; Lee,Cheng-Wei; Wang,Shih-Ting |
| 國立東華大學 |
2006 |
Band-Edge Transitions of a Metallorganic Chemical Vapor Deposited ZnO Film on Si by Thermoreflectance Spectroscopy
|
Chen,Y. J.; Ho,C. H.; Liang,Y. H. |
| 國立交通大學 |
2019-04-03T06:36:42Z |
Band-Engineered Local Cooling in Nanoscale Junctions
|
Hsu, Bailey C.; Chen, Yu-Chang |
| 國立彰化師範大學 |
2002-01 |
Band-Gap Bowing Parameter of the AlxGa1-xN Derived from Theoretical Simulation
|
Kuo, Yen-Kuang; Lin, Wen-Wei |
| 國立彰化師範大學 |
2002-09 |
Band-Gap Bowing Parameter of the AlxIn1-xN Derived from Theoretical Simulation
|
Kuo, Yen-Kuang; Lin, Wen-Wei |
| 國立彰化師範大學 |
2001-05 |
Band-Gap Bowing Parameter of the InxGa1-xN Derived From Theoretical Simulation
|
Kuo, Yen-Kuang; Lin, Wen-Wei; Lin, Jiann |
| 修平科技大學 |
2004-01 |
Band-gap bowing parameters of the zincblende ternary III-nitrides derived from theoretical simulation
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Wen-Wei Lin;Yen-Kuang Kuo;Bo-Ting Liou |
| 國立彰化師範大學 |
2004-01 |
Band-Gap Bowing Parameters of the Zincblende Ternary III–Nitrides Derived from Theoretical Simulation
|
Lin, Wen-Wei; Kuo, Yen-Kuang; Liou, Bo-Ting |
| 國立臺灣大學 |
2003 |
Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates
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Chang, C. S.; Chattopadhyay, S.; Chen, L. C.; Chen, K. H.; Chen, C. W.; Chen, Y. F.; Collazo, R.; Sitar, Z. |
Showing items 219576-219585 of 2348487 (234849 Page(s) Totally)
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