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Showing items 227701-227710 of 2348973 (234898 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:00Z |
Bipolar resistive switching effect in Gd2O3 films for transparent memory application
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Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih |
| 國立臺灣科技大學 |
2014 |
Bipolar resistive switching in transparent AZO/SiOx/ITO devices
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Yang, P.-J.;Jou, S.;Chiu, C.-C. |
| 國立交通大學 |
2014-12-08T15:29:28Z |
Bipolar resistive switching of chromium oxide for resistive random access memory
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Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang; Chen, Chi-Wen; Chen, Shih-Ching; Sze, S. M.; Tsai, Ming-Jinn; Kao, Ming-Jer; Huang, Fon-Shan Yeh |
| 臺大學術典藏 |
2007-06 |
Bipolar spin switch using Aharonov-Bohm ring with embedded double quantum dots
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Chen, Kuo-Wei; Liu, Ming-Hao; Chen, Son-Hsien; Chang, Ching-Ray; Chen, Kuo-Wei; Liu, Ming-Hao; Chen, Son-Hsien; Chang, Ching-Ray |
| 國立臺灣大學 |
2007-06 |
Bipolar spin switch using Aharonov-Bohm ring with embedded double quantum dots
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Chen, Kuo-Wei; Liu, Ming-Hao; Chen, Son-Hsien; Chang, Ching-Ray |
| 國立交通大學 |
2014-12-08T15:29:30Z |
Bipolar switching characteristics of low-power Geo resistive memory
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Cheng, C. H.; Chen, P. C.; Liu, S. L.; Wu, T. L.; Hsu, H. H.; Chin, Albert; Yeh, F. S. |
| 南台科技大學 |
2017-05 |
Bipolar switching properties and electrical conduction mechanism of manganese oxide RRAM devices
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Kai-Huang Chen; Ming-Cheng Kao; Shou-Jen Huang; Cheng-Ying Li; Chien-Min Cheng; Sean Wu; Zong-Hsun Wu |
| 朝陽科技大學 |
2025-12-26 |
Bipolar Switching Properties and Electrical Conduction Mechanism of Silicon Carbide Thin-film Resistive Random-access Memory Devices
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Chen, Kai-Huang; Kao, Ming-Cheng; Wang, Yao-Chin; Chen, Hsin-Chin; Kao, Chin-Chueh Huang; 高銘政 |
| 朝陽科技大學 |
2025-04-14 |
Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices
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Wang, Yao-Chin; Chen, Kai-Huang; Kao, Ming-Cheng; Chen, Hsin-Chin; Cheng, Chien-Min; Huang, Hong-Xiang; Huang, Kai-Chi; 高銘政 |
| 南台科技大學 |
2023-01 |
Bipolar Switching Properties of GdOx:SiO2 Thin Film Resistive Random Access Memory Using Co-Sputtering Technology
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Kai-Huang Chen;Chien-Min Cheng;Na-Fu Wang;Jia-Cheng Zhou;Mei-Li Chen |
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