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Institution	Date	Title	Author
國立成功大學	2002-11	Breakdown and stress-induced oxide degradation mechanisms in MOSFETs	Chen, J. H.; Wei, C. T.; Hung, S. M.; Wong, Shyh-Chyi; Wang, Yeong-Her
國立臺灣大學	2008	Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect	Su, V.C.; Lin, I.S.; Kuo, J.B.; Lin, G.S.; Chen, D.; Yeh, C.S.; Tsai, C.T.; Ma, M.
臺大學術典藏	2018-09-10T07:08:18Z	Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect	I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
亞洲大學	2023	Breakdown Behavior of a Nitrogen Implanted AlGaN/GaN HEMT Transistor with different Metal Contact Positions	RAMYASRI, MOGARALA
國立高雄師範大學	2001	Breakdown Characteristics of Ultra-thin Gate Oxide ( < 4nm ) in MOS Structure Subjected Substrate Injection	Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏
國立交通大學	2014-12-08T15:27:09Z	Breakdown characteristics of ultra-thin gate oxides caused by plasma charging	Chen, CC; Lin, HC; Chang, CY; Chien, CH; Huang, TY
國立臺灣大學	2001	Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal–oxide–semiconductor structure subjected to substrate injection	Huang, Chia-Hong; Hwu, Jenn-Gwo
國立交通大學	2014-12-08T15:41:52Z	Breakdown modes and their evolution in ultrathin gate oxide	Lin, HC; Lee, DY; Huang, TY
國立成功大學	2015-03-30	Breakdown of Bose-Einstein Distribution in Photonic Crystals	Lo, Ping-Yuan; Xiong, Heng-Na; Zhang, Wei-Min
臺大學術典藏	2020-05-22T05:37:20Z	Breakdown of Fourier’s Law in Nanotube Thermal Conductors	Chang, C.W.; Okawa, D.; Garcia, H.; Majumdar, A.; Zettl, A.

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