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Institution Date Title Author
國立交通大學 2018-08-21T05:53:48Z Dependence and phase changes in random m-ary search trees Chern, Hua-Huai; Fuchs, Michael; Hwang, Hsien-Kuei; Neininger, Ralph
國立臺灣海洋大學 2016-08 Dependence and phase changes in random m‐ary search trees Hua‐Huai Chern;Michael Fuchs;Hsien‐Kuei Hwang;Ralph Neininger
元智大學 2005-12 Dependence Behavior of T/M-Spaced Decision-Feedback Equalizer on Excess Bandwidth and Channel Delay Spread 黃正光; Rih-Lung Chung
元智大學 2005-12 Dependence Behavior of T/M-Spaced Decision-Feedback Equalizer on Excess Bandwidth and Channel Delay Spread 黃正光; Rih-Lung Chung
國立交通大學 2018-08-21T05:53:14Z DEPENDENCE BETWEEN PATH-LENGTH AND SIZE IN RANDOM DIGITAL TREES Fuchs, Michael; Hwang, Hsien-Kuei
國立臺灣科技大學 2012 Dependence of biasing voltage and illumination power on the built-in electric field of InGaP solar cells Shu, G.-W.;Yang, J.-J.;Shu, I.-J.;Shen, J.-L.;Yang, M.-D.;Wu, C.-H.;Huang, Y.-S.
亞洲大學 2009 Dependence of breakdown voltage on drift length and linear doping gradients in SOI RESURF LDMOS devices Yang, Shaoming ; Tseng, Wenchin ; Sheu, Gene
亞洲大學 2009-08 Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices 許健;Sheu, Gene;許健;Sheu, Gene
亞洲大學 2009-08 Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices 楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
亞洲大學 2009.08 Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices 楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
義守大學 1996-06 Dependence of Brightness Degradation on the Oxygen-Rich Concentration in ZnS: TbOF Electroluminescent Devices 許聰基;Sheu, Tong-ji;王欽戊;Wang, Ching-wu;馬聖雄;Ma, Sheng-hsiung
大葉大學 2010-11-18 Dependence of catalytic layer thickness on the surface morphology of germanium nanowires grown by the solid-liquid-solid method Chang, Yung-Ping;Lee, Li-Ying;Lee, Shih-Fong
國立臺灣大學 2004 Dependence of chain conformation on degree of sulfonation and counterion dissociation of sodium poly(styrene sulfonate) in semidilute aqueous solution Lin, King-Fu; Cheng, Horng-Long; Cheng, Yu-Hui
國立成功大學 2004-03 Dependence of Chain Conformation on Degree of Sulfonation and Counterion Dissociation of Sodium Poly(styrene sulfonate) in Semidilute Aqueous Solutions K. F. Lin; Cheng, Horng-Long; Y. H. Cheng
國立交通大學 2014-12-08T15:12:10Z Dependence of channel thickness on the performance of In(2)O(3) thin film transistors Dhananjay; Cheng, Shiau-Shin; Yang, Chuan-Yi; Ou, Chun-Wei; Chuang, You-Che; Wu, M. Chyi; Chu, Chih-Wei
國立交通大學 2019-04-02T06:01:08Z Dependence of channel thickness on the performance of In2O3 thin film transistors Dhananjay; Cheng, Shiau-Shin; Yang, Chuan-Yi; Ou, Chun-Wei; Chuang, You-Che; Wu, M. Chyi; Chu, Chih-Wei
臺大學術典藏 2018-09-10T03:27:16Z Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells Chyi, J.-I.; CHIH-CHUNG YANG; Lin, Y.-S.; Ma, K.-J.; Hsu, C.; Feng, S.-W.; Cheng, Y.-C.; Liao, C.-C.; Yang, C.C.; Chou, C.-C.; Lee, C.-M.
國立臺灣大學 2000 Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells Lin, Yen-Sheng; Ma, Kung-Jeng; Hsu, C.; Feng, Shih-Wei; Cheng, Yung-Chen; Liao, Chi-Chih; Yang, C. C.; Chou, Chang-Cheng; Lee, Chia-Ming; Chyi, Jen-Inn
國立成功大學 2001-09 Dependence of compositions and crystallization behaviors of dc-sputtered TiNi thin films on the deposition conditions Ting, Jyh-Ming; Chen, Peter
國立聯合大學 2006 Dependence of crystal structure and work function of WNx films on the nitrogen content Pei-Chuen Jiang, Yi-Sheng Lai, and J. S. Chen*
國立成功大學 2006-09-18 Dependence of crystal structure and work function of WNx films on the nitrogen content Jiang, Pei-Chuen; Lai, Yi-Sheng; Chen, Jen-Sue
國立成功大學 2005 Dependence of Cu/Ta-N/Ta metallization stability on the characteristics of low dielectric constant materials Chang, Ching-Chun; JangJian, Shiu-Ko; Chen, Jen-Sue
國立臺灣大學 2003 Dependence of Cycloplazonic-Acid-Induced Muscle Contractures on Extracellular Ca2+ 洪士榮; 梁秀娟; 沈青蓉; HONG, SUH-JEONG; LIANG, HSIU-CHUAN; SHEN, CHING-JUNG
國立交通大學 2014-12-08T15:42:07Z Dependence of deep level concentrations on ammonia flow rate in n-type GaN films Lee, L; Chang, FC; Chung, HM; Lee, MC; Chen, WH; Chen, WK; Huang, BR
國立交通大學 2014-12-08T15:14:26Z Dependence of device structures on latchup immunity in a high-voltage 40-V CMOS process with drain-extended MOSFETs Hsu, Sheng-Fu; Ker, Ming-Dou

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