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Showing items 443536-443545 of 2348487 (234849 Page(s) Totally) << < 44349 44350 44351 44352 44353 44354 44355 44356 44357 44358 > >> View [10|25|50] records per page
| 國立臺灣大學 |
1999 |
Ga0.51In0.49P/InxGa1 – xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 國立暨南國際大學 |
2003 |
Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)
|
陳志成?; Chen, CC |
| 國立暨南國際大學 |
2003 |
Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)
|
林佑昇?; Lin, YS |
| 國立臺灣大學 |
2003 |
Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)
|
Lin, Yo-Sheng; Chen, Chih-Chen; Lu, Shey-Shi |
| 臺大學術典藏 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Chang, Pei-Zen; Lu, Shey-Shi; Lin, Yo-Sheng; Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen |
| 國立臺灣大學 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 臺大學術典藏 |
2018-09-10T07:37:07Z |
Ga0.51In0.49P/InxGa1?xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
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Chang, P.-Z.; Lin, Y.-S.; Lu, S.-S.; Lu, S.-S. |
| 國立交通大學 |
2014-12-08T15:45:20Z |
Ga0.5In0.5P barrier layer for wet oxidation of AlAs
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Lee, SC; Lee, WI |
| 臺大學術典藏 |
2018-09-10T14:54:10Z |
GA2 and GA20-oxidase expressions are associated with the meristem position in Streptocarpus rexii (Gesneriaceae)
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Spada, A.; M?ller, M.; CHUN-NENG WANG; Wang, C.-N.; Nishii, K.;Ho, M.-J.;Chou, Y.-W.;Gabotti, D.;Wang, C.-N.;Spada, A.;M?ller, M.; Nishii, K.; Ho, M.-J.; Chou, Y.-W.; Gabotti, D. |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
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Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG |
Showing items 443536-443545 of 2348487 (234849 Page(s) Totally) << < 44349 44350 44351 44352 44353 44354 44355 44356 44357 44358 > >> View [10|25|50] records per page
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