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Showing items 443641-443650 of 2348487 (234849 Page(s) Totally)
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| 國立成功大學 |
1995 |
GaAs/AlAs夾層結構的載子動力學研究 (I)
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盧炎田 |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes
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Wang, YH;Tai, K;Wynn, JD;Hong, M;Fischer, RJ;Mannaerts, JP;Cho, AY; Wang, YH; Tai, K; Wynn, JD; Hong, M; Fischer, RJ; Mannaerts, JP; Cho, AY; MINGHWEI HONG |
| 國立交通大學 |
2014-12-12T02:07:11Z |
GaAs/AlGaAs量子井電子傳輸的幾何效應
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陳益德; CHEN,YI-DE; 汪大暉; WANG,DA-HUI |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
GaAs/AlxGa1- xAs quantum well infra-red photodetectors with cutoff wavelength $λ$c= 14.9 $μ$m
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Zussman, A; Levine, BF; Hong, Mingyi; Mannaerts, JP; MINGHWEI HONG |
| 國立交通大學 |
2014-12-12T01:53:33Z |
GaAs/In(0.5)Ga(0.5)P 雙接面太陽能電池磊晶與製程的設計
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林志遠; Lin, Chih Yuan; 余沛慈; Yu, Pei Chen |
| 國立臺灣大學 |
2009 |
GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer
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Lin, Y.R.; Lin, H.H.; Chu, J.H. |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer
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Y. R. Lin, H. H. Lin,;J. H. Chu; Y. R. Lin, H. H. Lin,; J. H. Chu; HAO-HSIUNG LIN |
| 國立成功大學 |
2009-03-16 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
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Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2009 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
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Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 國立交通大學 |
2015-11-26T00:57:08Z |
GaAsN/GaAs量子井中 光激發引致電滯曲線於不同溫度與電場之分析
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廖思雅; Liao, Siya; 陳振芳; Chen, Jenn-Fang |
Showing items 443641-443650 of 2348487 (234849 Page(s) Totally)
<< < 44360 44361 44362 44363 44364 44365 44366 44367 44368 44369 > >>
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