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Institution	Date	Title	Author
國立成功大學	2009-07	GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using In Situ SiH4 Treatment Process During Epitaxial Growth	Tsai, C. M.; Sheu, Jinn-Kong; Lai, Wei-Chih; Lee, Ming-Lun; Chang, Shoou-Jinn; Chang, C. S.; Ko, T. K.; Shen, C. F.
南台科技大學	2009	GaN-based LEDs output power improved by textured GaN/sapphire interface using in-situ SiH4 treatment process during epitaxial growth	李明倫; C. M. Tsai; J. K. Sheu; W.C. Lai; M. L. Lee; J. Chang; S. Chang; T. K. Ko; C. F. Shen
臺大學術典藏	2018-09-10T08:42:13Z	GaN-based LEDs surrounded with a two-dimensional nanohole photonic crystal structure for effective laterally guided mode coupling	Yun-Wei Cheng; Szu-Chieh Wang; Yu-Feng Yin; Liang-Yu Su; JianJang Huang; JIAN-JANG HUANG
國立成功大學	2012-09-15	GaN-Based LEDs With a Chirped Multiquantum Barrier Structure	Lin, Yu-Yao; Chuang, Ricky W.; Chang, Shoou-Jinn; Li, Shuguang; Jiao, Zhi-Yong; Ko, Tsun-Kai; Hon, S. J.; Liu, C. H.
國立成功大學	2011-08	GaN-Based LEDs With Air Voids Prepared by Laser Scribing and Chemical Etching	Shei, S. C.; Lo, H. M.; Lai, W. C.; Lin, W. C.; Chang, S. J.
國立成功大學	2011-09-15	GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth	Lin, N. M.; Chang, S. J.; Shei, S. C.; Lai, W. C.; Yang, Y. Y.; Lin, W. C.; Lo, H. M.
國立交通大學	2014-12-08T15:17:16Z	GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror	Lee, YJ; Hwang, JM; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; Lu, TC; Kuo, HC; Wang, SC
國立成功大學	2013-01-01	GaN-Based LEDs With an HT-AlN Nucleation Layer Prepared on Patterned Sapphire Substrate	Chang, Chung-Ying; Chang, Shoou-Jinn; Liu, C. H.; Li, Shuguang; Chen, Evan
國立成功大學	2012-02	GaN-based LEDs with Ar plasma treatment	Kuo, D. S.; Lam, K. T.; Wen, K. H.; Chang, S. J.; Ko, T. K.; Hon, S. J.
國立成功大學	2012-10-15	GaN-Based LEDs With Double Strain Releasing MQWs and Si Delta-Doping Layers	Chang, Chung-Ying; Chang, Shoou-Jinn; Liu, C. H.; Li, Shuguang; Lin, T. K.

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