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Showing items 525671-525680 of 2348973  (234898 Page(s) Totally)
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Institution Date Title Author
中原大學 1998-02 Inversion Temperatures and Molecular Interactions Ding-Wei Huang
臺大學術典藏 2018-09-10T07:34:16Z Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts Liao, Chichih;Cheng, Donald;Cheng, Chienchia;Cheng, KY;Feng, Milton;Chiang, TH;Kwo, J;Hong, M; Liao, Chichih; Cheng, Donald; Cheng, Chienchia; Cheng, KY; Feng, Milton; Chiang, TH; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T09:46:44Z Inversion-channel GaAs (100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces Chang, YC;Chang, WH;Merckling, C;Kwo, J;Hong, M; Chang, YC; Chang, WH; Merckling, C; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:22Z Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al2O3as a gate dielectric on different reconstructed surfaces Chang, Y.C.;Chang, W.H.;Merckling, C.;Kwo, J.;Hong, M.; Chang, Y.C.; Chang, W.H.; Merckling, C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:24Z Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric Chang, YC; Chang, WH; Chiu, HC; Tung, LT; Lee, CH; Shiu, KH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:40Z Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2 O3 as gate dielectric Lee, C.H.; Shiu, K.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG; Tung, L.T.; Chiu, H.C.; Chang, W.H.; Chang, Y.C.
臺大學術典藏 2018-09-10T07:34:13Z Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2 O 3 as gate dielectric Chang, YC;Chang, WH;Chiu, HC;Chang, YH;Tung, LT;Lee, CH;Hong, M;Kwo, J;Hong, JM;Tsai, CC; Chang, YC; Chang, WH; Chiu, HC; Chang, YH; Tung, LT; Lee, CH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:36Z Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2O3 as gate dielectric Chang, Y.C.;Chang, W.H.;Chiu, H.C.;Chang, Y.H.;Tung, L.T.;Lee, C.H.;Hong, M.;Kwo, J.;Hong, J.M.;Tsai, C.C.; Chang, Y.C.; Chang, W.H.; Chiu, H.C.; Chang, Y.H.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG
淡江大學 2017-05-16 Inversiones Chinas en el Caribe: Caracteristicas y Desafios 宮國威
義守大學 1998-08 Inversionless decoding of both errors and erasures of Reed-Solomon code Trieu-Kien Truong;J.H. Jeng;King-Chu Hung

Showing items 525671-525680 of 2348973  (234898 Page(s) Totally)
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