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Showing items 545441-545450 of 2348971 (234898 Page(s) Totally)
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| 淡江大學 |
1990-08 |
Leakage Characteristics of Labyrinth Seal
|
三宅範博;杜文謙 |
| 國立交通大學 |
2014-12-08T15:19:10Z |
Leakage conduction behavior in electron-beam-cured nanoporous silicate films
|
Liu, PT; Tsai, TM; Chang, TC |
| 國立中山大學 |
2005 |
Leakage conduction behavior in electron-beam-cured nanoporous silicate films
|
P.T. Liu;T.M. Tsai;T.C. Chang |
| 國立彰化師範大學 |
2010-12 |
Leakage Conduction Mechanism of Top-contact Organic Thin Film Transistors
|
Lin, Yow-Jon |
| 國立聯合大學 |
2010 |
Leakage coupling of ultrasensitive periodical silica thin-film long-period grating coated on tapered fiber
|
Cheng-Ling Lee*, Z.-Y. Weng, C.-J. Lin, Y.-Y. Lin |
| 南台科技大學 |
2007 |
Leakage current analysis of nitride based optoelectronics by emission microscopy inspection
|
Y. Z. Chiou; K. W. Lin |
| 南台科技大學 |
2008-09 |
Leakage Current Analysis of Nitride-Based Photodetectors by Emission Microscopy Inspection
|
Y. Z. Chiou |
| 國立交通大學 |
2014-12-16T06:14:24Z |
Leakage current cut-off device for ternary content addressable memory
|
Huang; Po-Tsang; Liu; Wen-Yen; Hwang; Wei |
| 國立交通大學 |
2014-12-16T06:15:48Z |
Leakage current cut-off device for ternary content addressable memory
|
Huang, Po-Tsang; Liu, Wen-Yen; Hwang, Wei |
| 國立高雄師範大學 |
2002-12 |
Leakage Current Improvement of AlGaN/GaN HFETs by High Resistive Mg-Doped GaN Layer
|
Ruey-Lue Wang;S. C. Wei;Y. K. Su;S. J. Chang;R. L. Wang;T. H. Hsu; 王瑞祿 |
Showing items 545441-545450 of 2348971 (234898 Page(s) Totally)
<< < 54540 54541 54542 54543 54544 54545 54546 54547 54548 54549 > >>
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