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Institution	Date	Title	Author
國立交通大學	2014-12-08T15:35:24Z	Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells	Kuo, Cheng-Huang; Fu, Yi Keng; Chang, L. C.; Chen, Yu An
義守大學	2006	Nitride-Based Blue-Light-Emitting Diodes with ITO-Covered Ni ∕ Au Mesh p-Contacts	Shui-Hsiang Su;Cheng-Chieh Hou;Meiso Yokoyama;Shi-Ming Chen
國立成功大學	2002-07	Nitride-based cascade near white light-emitting diodes	Chen, C. H.; Chang, Shoou-Jinn; Su, Yan-Kuin; Sheu, Jinn-Kong; Chen, Jone-Fang; Kuo, Cheng-Huang; Lin, Yi-Chao
國立成功大學	2007	Nitride-based dual-stage MQW LEDs	Chang, Shoou-Jinn; Wei, S. C.; Su, Yan-Kuin; Lai, W. C.
國立成功大學	2005-05	Nitride-based flip-chip ITO LEDs	Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Lee, C. T.; Chen, W. S.; Shen, C. F.; Hsu, Y. P.; Shei, Shih-Chang; Lo, H. M.
國立成功大學	2006-08	Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors	Chang, Shoou-Jinn; Chen, W. S.; Lin, Y. C.; Chang, C. S.; Ko, T. K.; Hsu, Y. P.; Shen, C. F.; Tsai, J. M.; Shei, Shih-Chang
南台科技大學	2006-08	Nitride-based flip-chip p-i-n photodiodes	T. K. Ko; S. J. Chang; Y. K. Su; Y. Z. Chiou; C. S. Chang; S. C. Shei; J. K. Sheu; W. C. Lai; Y. C. Lin; W. S. Chen; C. F. Shen;林永春
國立成功大學	2006-08	Nitride-based flip-chip p-i-n photodiodes	Ko, T. K.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S.; Shen, C. F.
國立成功大學	2003-07	Nitride-based green light emitting diodes grown by temperature ramping	Liu, C. H.; Su, Yan-Kuin; Wen, Ten-Chin; Chang, Shoou-Jinn; Chuang, R. W.
國立成功大學	2003-08	Nitride-based green light-emitting diodes with high temperature GaN barrier layers	Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Wen, Ten-Chin; Kuo, Chih-Hung; Lai, W. C.; Chang, C. S.; Tsai, J. M.; Sheu, Jinn-Kong
國立成功大學	2003-07-15	Nitride-based HFETs with carrier confinement layers	Su, Yan-Kuin; Chang, Shoou-Jinn; Kuan, T. M.; Ko, C. H.; Webb, J. B.; Lan, W. H.; Cherng, Ya-Tung; Chen, S. C.
國立成功大學	2007-05-15	Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate	Shen, C. F.; Chang, Shoou-Jinn; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang
國立成功大學	2003-09	Nitride-based LEDs fabricated on patterned sapphire substrates	Chang, Shoou-Jinn; Lin, Y. C.; Su, Yan-Kuin; Chang, C. S.; Wen, Ten-Chin; Shei, Shih-Chang; Ke, J. C.; Kuo, C. W.; Chen, S. C.; Liu, C. H.
國立臺灣科技大學	2012	Nitride-based LEDs fabricated on ZnO-buffered sapphire substrates	Huang, J.-B.;Nguyen, N.G.;Chou, C.-H.;Wei, S.-S.;Hong, L.-S.
國立成功大學	2004	Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers	Chang, S. J.; Wu, L. W.; Su, Y. K.; Hsu, Y. P.; Lai, W. C.; Tsai, J. A.; �Sheu,� Jinn-Kong; Lee C.T
國立成功大學	2008-09	Nitride-Based LEDs With a Hybrid Al Mirror +TiO2/SiO2 DBR Backside Reflector	Chang, Shoou-Jinn; Shen, C. F.; Hsieh, M. H.; Kuo, C. T.; Ko, T. K.; Chen, W. S.; Shei, Shih-Chang
南台科技大學	2007-03	Nitride-Based LEDs with an Insulating SiO2 Layer Underneath p-Pad Electrodes	S. J. Chang; C. F. Shen; W. S. Chen; T. K. Ko; C. T. Kuo; K. H. Yu; S. C. Shei; Y. Z. Chiou
國立成功大學	2007	Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes	Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Yu, Kuo-Hui; Shei, Shih-Chang; Chiou, Y. Z.
國立成功大學	2004-04	Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact	Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, Ricky Wenkuei; Lai, W. C.; Kuo, C. H.; Hsu, Y. P.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Ke, J. C.; Sheu, Jinn-Kong
國立成功大學	2011-04-01	Nitride-Based LEDs With High-Reflectance and Wide-Angle Ag Mirror+SiO(2)/TiO(2) DBR Backside Reflector	Lin, Nan-Ming; Shei, Shih-Chang; Chang, Shoou-Jinn
國立成功大學	2011-04-01	Nitride-based LEDs with high-reflectance and wide-angle Ag mirror+SiO2/TiO2 DBR backside reflector	Lin, Nan-Ming;Shei,Shih-Chang;Chang, Shoou-Jinn
國立成功大學	2005-12-01	Nitride-based LEDs with ITO on nanostructured silicon contact layers	Kuo, C. H.; Chen, S. C.; Chang, Shoou-Jinn
國立成功大學	2004-10	Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures	Wen, Ten-Chin; Chang, Shoou-Jinn; Lee, Ching-Ting; Lai, W. C.; Sheu, Jinn-Kong
國立成功大學	2005-09	Nitride-Based LEDs With MQW Active Regions Grown by Different Temperature Profiles	Chang, Shoou-Jinn; Wei, Sun-Chin; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Chen, Shi-Ming; Li, W. L.
國立成功大學	2005-12	Nitride-based LEDs with n(-)-GaN current spreading layers	Su, Yan-Kuin; Li, W. L.; Chen, S. M.; Chuang, R. W.; Wei, S. C.; Chang, Shoou-Jinn
國立交通大學	2014-12-08T15:16:20Z	Nitride-based LEDs with nano-scale textured sidewalls using natural lithography	Huang, HW; Kuo, HC; Chu, JT; Lai, CF; Kao, CC; Lu, TC; Wang, SC; Tsai, RJ; Yu, CC; Lin, CF
國立成功大學	2003-12	Nitride-based LEDs with p-InGaN capping layer	Chang, Shoou-Jinn; Chen, C. H.; Chang, Ping-Chuan; Su, Yan-Kuin; Chen, Ping-Cheng; Jhou, Y. D.; Hung, H.; Wang, S. M.; Huang, Bohr-Ran
實踐大學	2009	Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls	Kuo, D.S.;Chang, S.J.;Ko, T.K.;Shen, C.F.;Hon, S.J.;Hung, S.C.
國立成功大學	2009-04-15	Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls	Kuo, D. S.; Chang, Shoou-Jinn; Ko, T. K.; Shen, C. F.; Hon, S. J.; Hung, S. C.
國立成功大學	2003	Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer	Kuo, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; �Sheu, �Jinn-Kong; Tsai, J. M.
國立成功大學	2004-03	Nitride-based LEDs with textured side walls	Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Ching-Ting; Lin, Y. C.; Lai, W. C.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M.
國立成功大學	2005-08	Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures	Jhou, Y. D.; Chen, Chin-Hsing; Chuang, Ricky Wen-kuei; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, Ping-Chuan; Chen, Po-Chang; Hung, H.; Wang, S. M.; Yu, C. L.
國立成功大學	2007-07-02	Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography	Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Kuo, C. T.; Ko, T. K.; Shei, Shih-Chang; Sheu, Jinn-Kong
國立成功大學	2003-02	Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, Liang-Wen; Chen, Jone F.; Sheu, Jinn-Kong; Tsai, Ji-Ming
南台科技大學	2006-12	Nitride-based light emitting diodes with textured sidewalls and pillar waveguides	C. F. Shen; S. J. Chang; T. K. Ko; C. T. Kuo; S. C. Shei; W. S. Chen; C. T. Lee; C. S. Chang;Y. Z. Chiou
國立成功大學	2006-11	Nitride-based light emitting diodes with textured sidewalls and pillar waveguides	Shen, C. F.; Chang, Shoou-Jinn; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang; Chen, W. S.; Lee, Ching-Ting; Chang, C. S.; Chiou, Yu-Zung
國立成功大學	2008-05-01	Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures	Ji, L. W.; Young, Sheng-Joue; Liu, C. H.; Water, W.; Meen, Teen-Hang; Jywe, W. Y.
臺大學術典藏	2022-05-24T06:26:44Z	Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures	Ji L.W.;Young S.J.;Liu C.H.;Water W.;Meen T.H.;Jywe W.Y.; Ji L.W.; Young S.J.; Liu C.H.; Water W.; Meen T.H.; Jywe W.Y.; Wen-Yuh Jywe
國立成功大學	2004-12	Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers	Ji, L. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Hung, S. C.; Chang, C. S.; Wu, L. W.
國立成功大學	2002-12	Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts	Lin, Yi-Chao; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Chang, C. S.; Shei, Shih-Chang; Hsu, S. J.; Liu, Chun-Hsing; Liaw, U. H.; Chen, S. C.; Huang, Bohr-Ran
國立成功大學	2005-10	Nitride-based light-emitting diodes with p-AlInGaN surface layers	Kuo, Chih-Hung; Lin, C. C.; Chang, Shoou-Jinn; Hsu, Y. P.; Tsai, J. M.; Lai, W. C.; Wang, P. T.
國立成功大學	2009-07	Nitride-based metal-insulator-semiconductor capacitors with liquid-phase deposition oxide and (NH4)(2)S-x pretreatment prepared on sapphire substrates	Lan, C. H.; Hwang, J. D.; Chang, Shoou-Jinn; Lin, Y. C.; Cheng, Y. C.; Lin, Web-Jen; Lin, J. C.; Chang, K. J.
國立成功大學	2006-10	Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers	Chang, Shoou-Jinn; Yu, C. L.; Chang, Ping-Chuan; Lin, Y. C.; Chen, Chin-Hsiang
國立成功大學	2006-10	Nitride-based MIS-like photodiodes with semiinsulating Mg-doped GaN cap layers	Chang, Shoou-Jinn; Yu, Chia-Lin; Chuang, Ricky Wenkuei; Chang, Ping-Chuan; Lin, Y. C.; Jhan, Y. W.; Chen, C. H.
國立成功大學	2005-06	Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers	Wei, Sun-Chin; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, Shi-Ming; Li, W. L.
國立成功大學	2008	Nitride-Based MSM Photodetectors with a HEMT Structure and a Low-Temperature AlGaN Intermediate Layer	Lee, K. H.; Chuang, Ricky W.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Wang, Y. C.; Yu, C. L.; Lin, J. C.; Wud, S. L.
國立成功大學	2005-03	Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts	Su, Yan-Kuin; Chang, Ping-Chuan; Chen, Chin-Hsiang; Chang, Shoou-Jinn; Yu, Chia-Lin; Lee, Ching-Ting; Lee, H. Y.; Gong, J.; Chen, Po-Chang; Wang, C. H.
東海大學	2005	Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts	Su, Y.K.a, Chang, P.C.a, Chen, C.H.b, Chang, S.J.a , Yu, C.L.a, Lee, C.T.a, Lee, H.Y.a, Gong, J.c, Chen, P.C.d, Wang, C.H.d
國立成功大學	2003-05	Nitride-based multiquantum well p-n junction photodiodes	Su, Yan-Kuin; Chang, Shoou-Jinn; Chiou, Yu-Zung; Tsai, Tzong-Yow; Gong, Jeng; Lin, Yi-Chao; Liu, Sen-Hai; Chang, Chia-Sheng
東海大學	2003	Nitride-based multiquantum well p-n junction photodiodes	Su, Y.-K.a, Chang, S.-J.a , Chiou, Y.-Z.a, Tsai, T.-Y.a, Gong, J.b, Lin, Y.-C.a, Liu, S.-H.a, Chang, C.-S.

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