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Showing items 695526-695550 of 2348973  (93959 Page(s) Totally)
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Institution Date Title Author
國立中山大學 2003 Properties of TiO2 thin film on GaAs prepared by Metalorganic Chemical Vapor Deposition Ming-Kwei Lee; Jung-Jie Huang; Yi-Min Hung; Ming-Chi Fan
國立中山大學 2002 Properties of TiO2 thin films on InP substrate prepared by liquid phase deposition M.K. Lee; J.J. Huang; C.M. Shih; C.C. Cheng
國立中山大學 2001-11 Properties of TiO2 thin films on InP substrate prepared by liquid phase deposition M.K. Lee;J.J. Huang;C.M. Shih;C.C. Cheng
國立中山大學 2001 Properties of TiO2 Thin Films on InP Substrate Prepared by Metalorganic Chemical Vapor Deposition M.K. Lee; E.M. Hung; J.J. Huang
國立中山大學 2006-12 Properties of titanium oxide grown on poly-silicon by metal organic chemical vapor deposition Ming-Kwei Lee;Hung-Chang Lee;Chih-Min Hsu
國立聯合大學 2006 Properties of Tm3+ and Tm3+/Er3+ Codoping Alumina Zincphosphate Laser Glasses Yung SW, Lin YI and Tsai
國立彰化師範大學 2012-03 Properties of Transparent Yttrium Oxide Dielectric Films Prepared by sol–gel Process Tsay, Chien-Yie; Cheng, Chia-Hsiang; Wang, Yu-Wu
國立成功大學 2012 Properties of TTCP/DCPA/CSH Cement Immersed in Hanks' Solution Lin, Jiin-Huey Chern; Hung, Sen-Hsiang; Chen, Wei-Luen; Chen, Chang-Keng; Lee, Jing-Wei; Lin, Ruey-Mo; Ju, Chien-Ping
國立臺灣大學 1986 Properties of Two Chymotrypsins from the Digestive Gland of Prawn Penaeus Monodon 蔡蔭和; Liu, H. C.; Chuang, K. L.; Tsai, Inn-Ho; Liu, H. C.; Chuang, K. L.
臺大學術典藏 1993 Properties of Ultrafine Alumina Prepared by Colloidal Process Lu, S. J.; Wei, Wen-Cheng; Lu, S. J.; 韋文誠; Wei, Wen-Cheng; Lu, S. J.
國立臺灣大學 1993 Properties of Ultrafine Alumina Prepared by Colloidal Process 韋文誠; Lu, S. J.; Wei, Wen-Cheng; Lu, S. J.
淡江大學 2003-11 Properties of valuable new intermetallics: Brewer–Engel model applied to the bonding of transition metal dialuminides Brewer, Leo; Krushwitz, Karen; Lamoreaux, Robert; 吳慧芬; Wu, Hui-fen
國立中山大學 2003-11 Properties of valuable new intermetallics: Brewer–Engel model applied to the bonding of transition metal dialuminides L. Brewer; K. Krushwitz; R. Lamoreaux; H.F. Wu
臺大學術典藏 2018-09-10T09:50:19Z Properties of Variable Al Content of AlGaN Layers Grown by MOCVD C. X. Wang,;F. D. Li,;S. C. Wang,;M. Zhu,;X. Zhang,;H. H. Lin,;Z. C. Feng,; C. X. Wang,; F. D. Li,; S. C. Wang,; M. Zhu,; X. Zhang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN
國立交通大學 2014-12-08T15:40:43Z Properties of VO2 films sputter-deposited from V2O5 target Tsai, KY; Chin, TS; Shieh, HPD
國立交通大學 2014-12-08T15:06:13Z Properties of vortex propagation in a niobium film with spacing-graded density of pinning sites Horng, Lance; Wu, T. C.; Wu, J. C.; Cao, R.; Yang, T. J.
國立彰化師範大學 2007 Properties of Vortex Propagation in a Niobium Film with Spacing-graded Density of Pinning Sites Horng, Lance; Wu, T. C. ; Wu, J. C. ; Cao, R. ; Yang, T. J.
國立彰化師範大學 2007 Properties of Vortex Propagation in a Niobium Film with Spacing-graded Density of Pinning Sites Horng, Lance; Wu, T. C. ; Wu, Jong-Ching; Cao, R. ; Yang, T. J.
國立臺灣大學 2004 Properties of wood plasticization with octanoyl chloride in a solvent-free system Wu, J. H.; Hsieh, T. Y.; Lin, H. Y.; Shiau, I. L.; Chang, S. T.
臺大學術典藏 2018-09-10T04:48:39Z Properties of wood plasticization with octanoyl chloride in a solvent-free system Wu, J. H.;Hsieh, T. Y.;Lin, H. Y.;Shiau, I. L.;Chang, S. T.; Wu, J. H.; Hsieh, T. Y.; Lin, H. Y.; Shiau, I. L.; Chang, S. T.; SHANG-TZEN CHANG
國立成功大學 2008-04 Properties of zinc oxide films cosputtered with aluminum at room temperature Liu, Day-Shan; Tsai, Fu-Chun; Lee, Ching-Ting; Sheu, Cheng-Wei
國立成功大學 2003 Properties of ZnO-based love mode acoustic filters on 90 degrees rotated ST-Cut quartz substrates Chu, Sheng-Yuan; Water, Water; Liaw, Jih-Tsang
國立成功大學 2003-03 Properties of ZnO-doped Zr0.8Sn0.2TiO4 thin films by rf sputtering Huang, Cheng-Liang; Hsu, Cheng-Shing
國立成功大學 2007-03 Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures Sahu, Diptiranjan; Huang, Jow-Lay
國立臺灣科技大學 2018 Properties optimization with high nitrogen content doping for InGaZnO films deposited by reactive sputtering with a GaN-embedded cermet target Kuo D.-H.; Huang Y.-K.; Hsueh T.H.; Jan D.-J.

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