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Showing items 743771-743780 of 2348964 (234897 Page(s) Totally) << < 74373 74374 74375 74376 74377 74378 74379 74380 74381 74382 > >> View [10|25|50] records per page
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
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Chien, ND; Chien, ND |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
Huang, MK; Huang, MK |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
Shia, RK; Shia, RK |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
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施君興?; Shih, CH |
| 國立交通大學 |
2014-12-08T15:43:58Z |
Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
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Lin, HC; Yeh, KL; Huang, RG; Lin, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:02:26Z |
Schottky contact and the thermal stability of Ni on n-type GaN
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Guo, JD; Pan, FM; Feng, MS; Guo, RJ; Chou, PF; Chang, CY |
| 南台科技大學 |
2017-12-28 |
Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments
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Kai-Huang Chen; Tsung-Ming Tsai; Chien-Min Cheng; Shou-Jen Huang; Kuan-Chang Chang; Shu-Ping Liang; Tai-Fa Young |
| 國立臺灣大學 |
1999-03 |
Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAlxGa1-x as a metallization
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Chen, C. P.; Lin, C. F.; Swenson, D.; Kao, C. R.; Jan, C. H.; Chang, and Y. A. |
| 國立成功大學 |
2007-01-15 |
Schottky mechanism for Ni/Au contact with chlorine-treated n-type GaN layer
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Chen, Po-Sung; Lee, Tsung-Hsin; Lai, Li-Wen; Lee, Ching-Ting |
| 國立交通大學 |
2014-12-08T15:06:32Z |
SCHOTTKY PHOTO-TRANSISTOR
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LEE, CL; FEUCHT, DL |
Showing items 743771-743780 of 2348964 (234897 Page(s) Totally) << < 74373 74374 74375 74376 74377 74378 74379 74380 74381 74382 > >> View [10|25|50] records per page
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