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显示项目 309616-309625 / 2348971 (共234898页) << < 30957 30958 30959 30960 30961 30962 30963 30964 30965 30966 > >> 每页显示[10|25|50]项目
| 臺大學術典藏 |
2018-09-10T09:44:49Z |
Depletion-induced size fractionation of nanorod dispersions
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YU-JANE SHENG;Tsao, H.-K.;Sheng, Y.-J.;Hu, S.-W.;YU-JANE SHENG; Hu, S.-W.; Sheng, Y.-J.; Tsao, H.-K.; YU-JANE SHENG |
| 國立臺灣大學 |
2002 |
Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications
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Tsai, M-K; Tan, S-W; Wu, Y-W; Lour, W-S; Yang, Y-J |
| 臺大學術典藏 |
2018-09-10T04:15:52Z |
Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications
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M.-K. Tsai; S.-W. Tan; Y.-W. Wu; W.-S. Lour; Y. J. Yang; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T07:01:18Z |
Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis
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Wang, Y; Hong, M; Kuo, J; Mannaerts, J; Kwo, J; Tsai, H; Krajewski, J; Chen, Y; Cho, A; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:18Z |
Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3) as a gate dielectric
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Tsai, PJ; Chu, LK; Chen, YW; Chiu, YN; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:45Z |
Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3 ) as a gate dielectric
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Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Lin, CA;Lin, TD;Chiang, TH;Chiu, HC;Chang, P;Hong, M;Kwo, J; Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2009 |
Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics
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Lin, C.A.;Lin, T.D.;Chiang, T.H.;Chiu, H.C.;Chang, P.;Hong, M.;Kwo, J.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Chiu, H.C.; Chang, P.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:52:00Z |
Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
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Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, HJL; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG |
| 國立東華大學 |
2005 |
Depletion-mode InGaAs/GaAs MOSFET with oxide passivated by amorphous Si
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祁錦雲; Jim-Yong Chi; P. J. Tsai; U.N.Chiu;L. K. Chu; Y. W. Chen; H. P. Yang; P. Chang; J. Kwo; J. Chi; M. Hong |
显示项目 309616-309625 / 2348971 (共234898页) << < 30957 30958 30959 30960 30961 30962 30963 30964 30965 30966 > >> 每页显示[10|25|50]项目
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