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显示项目 457831-457840 / 2348570 (共234857页)
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| 國立臺灣大學 |
2004-06 |
Growth and Characterization of GaN Nanowires Produced on Different Sol-gel Derived Catalyst Dispersed in TiO2 and Polyvinyl Alcohol Matrix
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Chatterjee A; Chattopadhyay S; Hsu CW; Shen CH; Chen LC; Chen KH; Lee HY |
| 元智大學 |
2023-12-01 |
Growth and Characterization of GaN Thin Films on Si Substrates with AlN Buffer Layer and RF Sputtering
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Li-Cheng Huang; Wei-Sheng Liu; Balaji G; Kuo-Jui Hu; Guo-Hong Shen |
| 國立臺灣大學 |
2006 |
Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates
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Wu, Kun-Ta; Chang, P.H.; Lien, S.T.; Chen, N.C.; Chang, Ching-An; Shih, C.F.; Lien, W.C.; Wu, Y.H.; Chen, Shang-Chia; Chang, Y.H.; Liang, C.-T. |
| 臺大學術典藏 |
2018-09-10T05:49:48Z |
Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates
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Wu, K.-T.; Wu, K.-T.; CHI-TE LIANG; YUAN-HUEI CHANG et al. |
| 國立交通大學 |
2014-12-08T15:10:40Z |
Growth and characterization of Ge nanostructures selectively grown on patterned Si
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Cheng, M. H.; Ni, W. X.; Luo, G. L.; Huang, S. C.; Chang, J. J.; Lee, C. Y. |
| 國立交通大學 |
2018-08-21T05:53:47Z |
Growth and characterization of high quality CIGS films using novel precursors stacked and surface sulfurization process
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Wu, Cheng-Han; Wu, Pu-Wei; Hsiao, Ruey-Chang; Hsu, Chun-Yao |
| 國立交通大學 |
2018-08-21T05:52:47Z |
Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application
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Hsiao, Chih Jen; Kakkerla, Ramesh Kumar; Chang, Po Chun; Lumbantoruan, Franky Juanda; Lee, Tsu Ting; Lin, Yueh Chin; Chang, Shoou Jinn; Chang, Edward Yi |
| 臺大學術典藏 |
2000-05 |
Growth and characterization of InAsN alloys
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Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru |
| 國立臺灣大學 |
2000-05 |
Growth and characterization of InAsN alloys
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Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy
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J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN |
显示项目 457831-457840 / 2348570 (共234857页)
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