English  |  正體中文  |  简体中文  |  总笔数 :0  
造访人次 :  52239079    在线人数 :  1081
教育部委托研究计画      计画执行:国立台湾大学图书馆
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
关于TAIR

浏览

消息

著作权

相关连结

跳至: [ 中文 ] [ 数字0-9 ] [ A B C D E F G H I J K L M N O P Q R S T U V W X Y Z ]
请输入前几个字:   

显示项目 458451-458460 / 2348487 (共234849页)
<< < 45841 45842 45843 45844 45845 45846 45847 45848 45849 45850 > >>
每页显示[10|25|50]项目

机构 日期 题名 作者
國立交通大學 2014-12-08T15:11:22Z Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions Huang, Ting-Kai; Chen, Ying-Chieh; Ko, Hsin-Chun; Huang, Hsin-Wei; Wang, Chia-Hsin; Lin, Huang-Kai; Chen, Fu-Rong; Kai, Ji-Jung; Lee, Chi-Young; Chiu, Hsin-Tien
元智大學 2009-01 Growth of high-density InN nanodots by pulsed MOVPE 柯文政; 林文仁; 李大青; 林家慶
國立臺灣海洋大學 2002-03-15 Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy Fu-Hsiang Yang;Jih-Sheng Hwang;Ying-Jay Yang;Kuei-Hsien Chen;Jih-Hsiang Wang
國立臺灣大學 2002 Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy Yang, Fu-Hsiang; Hwang, Jih-Sheng; Yang, Ying-Jay; Chen, Kuei-Hsien; Wang, Jih-Hsiang
國立交通大學 2014-12-08T15:33:45Z Growth of high-quality epitaxial ZnO films on (10-10) sapphire by atomic layer deposition with flow-rate interruption method Huang, Jheng-Ming; Ku, Ching-Shun; Lee, Hsin-Yi; Lin, Chih-Ming; Chen, San-Yuan
國立交通大學 2014-12-08T15:25:54Z Growth of high-quality GaAs epitaxial layers on Si substrite by using a novel GeSi buffer strucuture Chang, EY; Luo, GL; Yang, TH
國立交通大學 2014-12-08T15:40:52Z Growth of high-quality Ge epitaxial layers on Si(100) Luo, GL; Yang, TH; Chang, EY; Chang, CY; Chao, KA
國立交通大學 2014-12-08T15:21:13Z Growth of High-Quality In(0.4)Ga(0.6)N Film on Si Substrate by Metal Organic Chemical Vapor Deposition Binh-Tinh Tran; Chang, Edward-Yi; Lin, Kung-Liang; Wong, Yuen-Yee; Sahoo, Kartika Chandra; Lin, Hsiao-Yu; Huang, Man-Chi; Hong-Quan Nguyen; Lee, Ching-Ting; Hai-Dang Trinh
國立交通大學 2018-08-21T05:54:15Z Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applications Huynh, Sa Hoang; Ha, Minh Thien Huu; Do, Huy Binh; Nguyen, Tuan Anh; Yu, Hung Wei; Luc, Quang Ho; Chang, Edward Yi
國立交通大學 2019-04-02T05:57:55Z Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition Binh-Tinh Tran; Chang, Edward-Yi; Lin, Kung-Liang; Wong, Yuen-Yee; Sahoo, Kartika Chandra; Lin, Hsiao-Yu; Huang, Man-Chi; Hong-Quan Nguyen; Lee, Ching-Ting; Hai-Dang Trinh

显示项目 458451-458460 / 2348487 (共234849页)
<< < 45841 45842 45843 45844 45845 45846 45847 45848 45849 45850 > >>
每页显示[10|25|50]项目