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显示项目 619456-619465 / 2348971 (共234898页)
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| 國立交通大學 |
2018-08-21T05:56:58Z |
Normalized Weighted Energy Detection for Spectrum Sensing Under Random Primary Signal Arrival
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Huang, Pei-Hsin; Chang, Ling-Hua; Wu, Jwo-Yuh |
| 國立臺灣海洋大學 |
2011-04-02 |
Normalizing XRF-scanner data: A cautionary note on the interpretation of high-resolution records from organic-rich lakes
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L. Löwemark;H.-F. Chen;T.-N. Yang;M. Kylander;E.-F. Yu;Y.-W. Hsu;T.-Q. Lee;S.-R. Song;S. Jarvis |
| 國立臺灣大學 |
2011 |
Normalizing XRF-scanner data: A cautionary note on the interpretation of high-resolution records from organic-rich lakes
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Lowemark, L.; Chen, H.-F.; Yang, T.-N.; Kylander, M.; Yu, E.-F.; Hsu, Y.-W.; Lee, T.-Q.; Song, S.-R.; Jarvis, S. |
| 臺大學術典藏 |
2018-09-10T08:38:22Z |
Normalizing XRF-scanner data: A cautionary note on the interpretation of high-resolution records from organic-rich lakes
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L{\\"oLowemark, L.;Chen, H.-F.;Yang, T.-N.;Kyl;er, M.;Yu, E.-F.;Hsu, Y.-W.;Lee, T.-Q.;Song, S.-R.;Jarvis, S.; L{\\"oLowemark, L.; Chen, H.-F.; Yang, T.-N.; Kyl; er, M.; Yu, E.-F.; Hsu, Y.-W.; Lee, T.-Q.; Song, S.-R.; Jarvis, S.; LUDVIG LOWEMARK; SHENG-RONG SONG et al. |
| 國立交通大學 |
2014-12-08T15:01:40Z |
Normally on reflection-type two-wavelength quantum-well modulator with balanced cavity design
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Tsai, CM; Lee, CP |
| 國立成功大學 |
2017 |
Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment
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Lee, C.-S.;Liu, H.-Y.;Hsu, W.-C.;Chen, S.-F. |
| 國立成功大學 |
2016-01 |
Normally-off AlGaN/GaN high-electron-mobility transistor on Si(111) by recessed gate and fluorine plasma treatment
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Lin, Jyun-Hao; Huang, Shyh-Jer; Lai, Chao-Hsing; Su, Yan-Kuin |
| 國立交通大學 |
2019-04-02T05:58:35Z |
Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion Implantation
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Wu, Chia-Hsun; Han, Ping-Cheng; Quang Ho Luc; Hsu, Ching-Yi; Hsieh, Ting-En; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立成功大學 |
2020 |
Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment
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Huang, Y.-P.;Lee, C.-S.;Hsu, W.-C. |
| 國立交通大學 |
2014-12-08T15:48:19Z |
Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
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Chang, C. -T.; Hsu, T. -H.; Chang, E. Y.; Chen, Y. -C.; Trinh, H. -D.; Chen, K. J. |
显示项目 619456-619465 / 2348971 (共234898页)
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