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显示项目 731226-731235 / 2348964 (共234897页)
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| 國立交通大學 |
2018-08-21T05:54:17Z |
RF loss mechanisms in GaN-based high-electron-mobility-transistor on silicon: Role of an inversion channel at the AlN/Si interface
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Luong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Weng, You-Chen; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi |
| 國立成功大學 |
2016-10-07 |
RF magnetron co-sputtering growth and characterisation of multiferroic composite films of Ni0.5Zn0.5Fe2O4 BiFeO3
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Lu, Shih-Zong; Qi, Xiaoding |
| 國立成功大學 |
2019-10-5 |
RF magnetron sputter deposition and electrical properties of La and Y doped SrTiO3 epitaxial films
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Guo;Chen-Yuan;Qi;Xiaoding |
| 國立交通大學 |
2014-12-08T15:04:29Z |
RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE FILM ON A REACTIVELY ION-ETCHED ACRYLIC SUBSTRATE
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CHIOU, BS; HSIEH, ST |
| 國立成功大學 |
2011-04 |
RF MEMS capacitive switch with leaky nanodiamond dielectric film
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Chen, Changwei; Tzeng, Yonhua; Kohn, Erhard; Wang, Chin-Hung; Mao, Jun-Kai |
| 國立交通大學 |
2014-12-08T15:26:31Z |
RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics
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Chen, SB; Lai, CH; Chin, A; Hsieh, JC; Liu, J |
| 國立交通大學 |
2014-12-08T15:19:10Z |
RF MOSFET characterization by four-port measurement
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Wu, SD; Huang, GW; Chen, KM; Tseng, HC; Hsu, TL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:42:16Z |
RF noise characteristics of high-k AlTiOx and Al2O3 gate dielectrics
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Chen, SB; Huang, CH; Chin, A; Lin, J; Jou, JP; Su, KC; Liu, J |
| 國立交通大學 |
2014-12-08T15:41:42Z |
RF noise in 0.18-mu m and 0.13-mu m MOSFETs
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Huang, CH; Lai, CH; Hsieh, JC; Liu, J; Chin, A |
| 國立交通大學 |
2017-04-21T06:48:55Z |
RF Noise Modeling of SiGe HBTs Using Four-Port De-embedding Method
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Chen, Kun-Ming; Chen, Han-Yu; Huang, Guo-Wei; Liao, Wen-Shiang; Chang, Chun-Yen |
显示项目 731226-731235 / 2348964 (共234897页)
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