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顯示項目 211956-211965 / 2348570 (共234857頁)
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| 淡江大學 |
2025-06-17 |
Asymmetric Fluorinated Cyclopenta [2, 1‐b: 3, 4‐b'] Dithiophene‐Based Hole‐Transporting Materials for Perovskite Solar Cell
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Lee, Kun‐Mu;Pan, Jui‐Ting;Chen, Wen‐Tzu;Lin, Chia‐Hui;Wang, Zhe‐Wei;Chiu, Wei‐Hao;Chu, Wei‐Chen;Chang, Ya‐Ho;Hsu, Jen‐Fu;Li, Sie‐Rong;Lu, Shih‐I;Hsieh, Hsiao‐Chi;Hu, Chih‐Wei;Chen, Chih‐Hung;Chiu, Jian‐Ming;Liau, Kang‐Ling;Chen, Gao;Liu, Yun‐Shuo;Sun, Shih‐Sheng;Lin, Yan‐Duo |
| 佛光大學 |
2004-09-02 |
Asymmetric Foreign Expansion Mode under R&D Uncertainty
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林啟智;陳忠榮;林敏雄 |
| 國立臺灣大學 |
2008 |
Asymmetric Fourier descriptor for unclosed segment description
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Ding, J.J.; Huang, J.D.; Kuo, C.J.; Wang, W.F. |
| 臺大學術典藏 |
2010 |
Asymmetric Fourier descriptor of non-closed segments
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Ding, Jian-Jiun; Chao, Wei-Lun; Huang, Jiun-De; Kuo, Cheng-Jin; Ding, Jian-Jiun; Chao, Wei-Lun; Huang, Jiun-De; Kuo, Cheng-Jin |
| 國立臺灣大學 |
2010 |
Asymmetric Fourier descriptor of non-closed segments
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Ding, Jian-Jiun; Chao, Wei-Lun; Huang, Jiun-De; Kuo, Cheng-Jin |
| 國立成功大學 |
2024-01-8 |
Asymmetric Full-Color Vectorial Meta-holograms Empowered by Pairs of Exceptional Points
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Yang;Zijin;Huang;Po-Sheng;Lin;Yu-Tsung;Qin;Haoye;Chen;Jiaxin;Han;Sanyang;Huang;Wei;Deng;Zi-Lan;Li;Bo;Zuniga-Perez;Jesus;Genevet;Patrice;Wu;Chieh, Pin;Song;Qinghua |
| 國立交通大學 |
2014-12-08T15:07:07Z |
Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants
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Lee, Kuo-Fu; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2019-04-02T05:59:29Z |
Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants
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Lee, Kuo-Fu; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:48:22Z |
Asymmetric Gate Capacitance and High Frequency Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete Dopants
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Li, Yiming; Hwang, Chih-Hong; Yeh, Ta-Ching |
| 臺大學術典藏 |
2018-09-10T04:35:19Z |
Asymmetric Gate Misalignment Effect on Subthreshold Characteristics DG SOI NMOS Devices Considering Fringing Electric Field Effect
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M. T. Lin; E. C. Sun; J. B. Kuo; JAMES-B KUO |
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