| 臺大學術典藏 |
2018-09-10T07:41:13Z |
Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 國立臺灣大學 |
2009 |
Band alignment of InAs1-xSbx (0.05?x?0.13)/InAs0.67P0.23Sb0.10 heterostructures
|
Wu, Chen-Jun; Tsai, Gene; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum well
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum wells
|
C. J. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 國立交通大學 |
2019-04-02T06:00:32Z |
Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy
|
Huan, Ya-Wei; Wang, Xing-Lu; Liu, Wen-Jun; Dong, Hong; Long, Shi-Bing; Sun, Shun-Ming; Yang, Jian-Guo; Wu, Su-Dong; Yu, Wen-Jie; Horng, Ray-Hua; Xia, Chang-Tai; Yu, Hong-Yu; Lu, Hong-Liang; Sun, Qing-Qing; Ding, Shi-Jin; Zhang, David Wei |
| 國立交通大學 |
2014-12-08T15:31:26Z |
Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
|
Hai Dang Trinh; Minh Thuy Nguyen; Lin, Yueh Chin; Quoc Van Duong; Hong Quan Nguyen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:30:42Z |
Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layer
|
Liao, Yu-An; Hsu, Wei-Ting; Huang, Shih-Han; Chiu, Pei-Chin; Chyi, Jen-Inn; Chang, Wen-Hao |
| 臺大學術典藏 |
2021-09-02T00:03:49Z |
Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces
|
Lan H.-S;Liu C.W.; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 國立成功大學 |
2006-11-06 |
Band anticrossing in InGaPN alloys induced by N-related localized states
|
Lin, Kuang-I; Huang, Wung-Hong |
| 國立彰化師範大學 |
2010-08 |
Band Bending at the Conducting Polymer/Indium Tin Oxide Interfaces with and without Ultraviolet Treatment
|
Lin, Yow-Jon; Chin, Yi-Min; Lin, Jung-Chung; Su, Yu-Chao |
