| 國立高雄大學 |
2009 |
Enhancement with carobon nanotube barrier on 1,2 Dichlorobenzene removal from soil by Surfactant-Assisted Electrokinetic (SAEK) Process - The effect of processing fluid.
|
袁菁; Ching Yuan*;Chung-Hsuang Hung;Wan-Ling Huang |
| 國立成功大學 |
2007-09 |
Enhancement, of conductivity for poly(ethylene terephthalate) matrix reinforced with carbon nanotubes
|
Shiau, Shiuan-Hua; Kuo, Cheng-Yung; Gau, Chie; Liu, Chien-Wei; Lin, Chung-Hung |
| 臺大學術典藏 |
2018-09-10T06:28:16Z |
Enhancement-Mode (with Channel Inversion) and Depletion-Mode MOSFETs with Ga2O3 (Gd2O3)/Si3N4 Dual-Layer Gate Dielectrics on In0. 2Ga0. 8As
|
Zheng, JF; Tsai, W; Hong, M; Lin, TD; Chen, CP; Kwo, J; Wang, XW; Ma, TP; MINGHWEI HONG |
| 國立交通大學 |
2017-04-21T06:48:49Z |
Enhancement-mode AlGaN/GaN MIS-HEMTs with Low Threshold Voltage Hysteresis Using Damage-free Neutral Beam Etched Gate Recess
|
Lin, Yen-Ku; Noda, Shuichi; Lee, Ruey-Bor; Huang, Chia-Ching; Quang Ho Luc; Samukawa, Seiji; Chang, Edward Yi |
| 臺大學術典藏 |
2020-06-29T01:15:33Z |
Enhancement-mode AlGaN/GaN MOS-HEMT on silicon with ultrathin barrier and diluted KOH passivation
|
Chang, L.-C.;Tsai, T.-H.;Jiang, Y.-H.;Wu, C.-H.; Chang, L.-C.; Tsai, T.-H.; Jiang, Y.-H.; Wu, C.-H.; CHAO-HSIN WU |
| 國立成功大學 |
2021 |
Enhancement-Mode Characteristics of Al.Ga.N/Al.Ga.N/AlN/SiC MOS-HFETs
|
Lee, C.-S.;Li, C.-L.;Hsu, W.-C.;You, C.-Y.;Liu, H.-Y. |
| 國立交通大學 |
2017-04-21T06:49:22Z |
Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulator
|
Lin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Huang, Y. X.; Liu, S. C.; Hsu, H. T.; Hsieh, T. E.; Kakushima, K.; Iwai, H.; Chang, E. Y. |
| 國立交通大學 |
2018-08-21T05:54:21Z |
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application
|
Lin, Yueh Chin; Huang, Yu Xiang; Huang, Gung Ning; Wu, Chia Hsun; Yao, Jing Neng; Chu, Chung Ming; Chang, Shane; Hsu, Chia Chieh; Lee, Jin Hwa; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chang, Edward Yi |
| 臺大學術典藏 |
2018-09-10T14:57:40Z |
Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer
|
Liang-Yu Su;Finella Lee;Jian Jang Huang; Liang-Yu Su; Finella Lee; Jian Jang Huang; JIAN-JANG HUANG |
| 國立交通大學 |
2014-12-16T06:15:18Z |
ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF
|
CHANG EDWARD YI; CHANG CHIA-HUA; LIN YUEH-CHIN |
| 國立交通大學 |
2014-12-16T06:15:05Z |
ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF
|
CHANG EDWARD YI; Chang Chia-Hua; Lin Yueh-Chin |
| 元智大學 |
Aug-22 |
Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer
|
李清庭; P. Y. Tsai; H. T. N. Nguyen; V. Nagarajan; C. H. Lin; C. F. Dee; S. C. Chen; H. C. Kuo; E. Y. Chang |
| 國立成功大學 |
2004-05 |
Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor
|
Chen, Yen-Wei; Chen, Yeong-Jia; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Lin, Yu-Shyan |
| 義守大學 |
2015-01 |
Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics
|
Chih-Chun Hu;Cheng-En Wu;Hsien-Cheng Lin;Kuan-Wei Lee;Yeong-Her Wang |
| 國立成功大學 |
2020-07 |
Enhancement-Mode InAlN/GaN Power MOSHEMT on Silicon With Schottky Tri-Drain Extension
|
Huang;Yi-Ping;Lee;Ching-Sung;Hsu;Wei-Chou |
| 國立中山大學 |
2006-12 |
Enhancement-mode MOSFETs with TiO2 as gate oxides prepared by MOCVD on Si and LPD on InP treated with (NH4)2Sx
|
M.K. Lee;C.F. Yen;S.H. Lin |
| 臺大學術典藏 |
2018-09-10T05:56:16Z |
Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates
|
Ren, F;Hong, MW;Hobson, WS;Kuo, JM;Lothian, JR;Mannaerts, JP;Kwo, J;Chen, YK;Cho, A'Y; Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:11:32Z |
Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade
|
Chao, Yu-Chiang; Tsai, Hung-Kuo; Zan, Hsiao-Wen; Hsu, Yung-Hsuan; Meng, Hsin-Fei; Horng, Sheng-Fu |
| 義守大學 |
2012-08 |
Enhancement-mode pseudomorphic high-electron-mobility transistor with a nanoscale oxidized GaAs gate
|
Kuan-Wei Lee;Hsien-Cheng Lin;Yeong-Her Wang |
| 國立成功大學 |
2019-06 |
Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications
|
Huang;Yi-Ping;Hsu;Wei-Chou;Liu;Han-Yin;Lee;Ching-Sung |
| 臺大學術典藏 |
2018-09-10T14:57:44Z |
Enhancement-Mode {GaN}-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type {GaN} Cap Layer
|
Liang-Yu Su;Finella Lee;Jian Jang Huang; Liang-Yu Su; Finella Lee; Jian Jang Huang; JIAN-JANG HUANG |
| 元智大學 |
Nov-16 |
Enhancements for duplication detection in bug reports with manifold correlation features
|
Meng-Jie Lin; Cheng-Zen Yang; Chao-Yuan Lee; Chun-Chang Chen |
| 衛生福利部國家中醫藥研究所 |
2008 |
Enhancements of 4-(methylnitrosamino)-1-(3-pyridyl)-1-butanone (NNK) metabolism and carcinogenic risk via NNK/arsenic interaction
|
Lee, Hui-Ling; Louis, W.Chang; Wu, Jui-Pin; Ueng, Yune-Fang; Tsai, Ming-Hsien; Lin, Pinpin |
| 衛生福利部國家中醫藥研究所 |
2007 |
Enhancements of 4-(methylnitrosamino)-1-(3-pyridyl)-1-butanone (NNK) metabolism and carcinogenic risk via NNK/arsenic interaction
|
Lee, Hui-Ling; Louis, W.Chang; Wu, Jui-Pin; Ueng, Yune-Fang; Tsai, Ming-Hsien; Lin, Pinpin |
| 國家衛生研究院 |
2008-02-15 |
Enhancements of 4-(methylnitrosamino)-1-(3-pyridyl)-1-butanone (NNK) metabolism and carcinogenic risk via NNK/arsenic interaction
|
Lee, HL; Chang, LW; Wu, JP; Ueng, YF; Tsai, MH; Hsieh, DPH; Lin, P |
