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顯示項目 443651-443660 / 2348487 (共234849頁)
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| 國立交通大學 |
2014-12-12T02:43:13Z |
GaAsN/GaAs量子井結構中光激發載子暫存降引致光電流抑制效應：等效電路RC時間常數分析
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黃志斌; Huang, Chih-Pin; 陳振芳; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-12T01:57:30Z |
GaAsN/GaAs量子井結構中光激發載子的光電容與光電流分析
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趙俊泓; 陳振芳 |
| 國立交通大學 |
2018-01-24T07:40:28Z |
GaAsN/GaAs量子井蕭基二極體在照光下之光電容模擬
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許雨堤; 陳振芳; Hsu, Yu-Ti; Chen, Jenn-Fang |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
GaAsPSb and its application to heterojunction bipolar transistors
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Y. C. Chin,;H. H. Lin,;H. S. Guo,;C. H. Huang,; Y. C. Chin,; H. H. Lin,; H. S. Guo,; C. H. Huang,; HAO-HSIUNG LIN |
| 國立成功大學 |
2012-05-28 |
GaAsSb bandgap, surface fermi level, and surface state density studied by photoreflectance modulation spectroscopy
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Hwang, J. S.; Tsai, J. T.; Su, I. C.; Lin, H. C.; Lu, Y. T.; Chiu, P. C.; Chyi, J. I. |
| 國立臺灣海洋大學 |
2017 |
GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement
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David Jui-Yang Feng;Yen-Ju Lin;Yun-Cheng Ku;Han-Yun Jhang;Tzy-Rong Lin;Mao-Kuen Kuo |
| 國立臺灣海洋大學 |
2017-03 |
GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement
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Mao-Kuen Kuo; David Jui-Yang Feng; Yen-Ju Lin; Yun-Cheng Ku; Han-Yun Jhang; Tzy-Rong Lin |
| 臺大學術典藏 |
2020-04-28T07:14:57Z |
GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement
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Feng, D.J.-Y.; Lin, Y.-J.; Ku, Y.-C.; Jhang, H.-Y.; Lin, T.-R.; Kuo, M.-K.; MAO-KUEN KUO |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
GaAsSb/GaAs quantum wells grown by MBE
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H. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2003-09 |
GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser
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Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren; Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren |
顯示項目 443651-443660 / 2348487 (共234849頁)
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