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顯示項目 458266-458275 / 2348570 (共234857頁) << < 45822 45823 45824 45825 45826 45827 45828 45829 45830 45831 > >> 每頁顯示[10|25|50]項目
| 國立成功大學 |
1991 |
Growth kinetics simulation of the Al-Ga self-organization on GaAs(100) stepped surfaces
|
Lu, Yan-Ten; Metiu, Horia |
| 國立政治大學 |
2001-06 |
Growth Management Issues and Establishing A Growth Control Quotas Framework in Taiwan
|
賴宗裕 |
| 南台科技大學 |
2007-10 |
Growth Mechanism and Characterization of ZnO:Al Multi-layered Thin Films by Sol-Gel Technique
|
林克默; K. Lin; P. Tsai |
| 國立臺灣科技大學 |
2011 |
Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching
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Hu, Z.S.;Hung, F.Y.;Chang, S.J.;Huang, B.R.;Lin, B.C.;Chen, K.J.;Chen, T.P.;Hsu, W.I. |
| 國立成功大學 |
2011-08 |
Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching
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Hu, Zhan-Shuo; Hung, Fei-Yi; Chang, Shoou-Jinn; Huang, Bohr-Ran; Lin, Bo-Cheng; Chen, Kuan-Jen; Chen, Tse-Pu; Hsu, Wen-I |
| 國立臺灣大學 |
2008 |
Growth mechanism and pH-regulation characteristics of composite latex particles prepared from Pickering emulsion polymerization of aniline/ZnO using different hydrophilicities of oil phases
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Jeng, Jauder; Chen, Tai-You; Lee, Chia-Fen; Liang, Nai-Yun; Chiu, Wen-Yen |
| 國立交通大學 |
2014-12-08T15:42:45Z |
Growth mechanism and properties of the large area well-aligned carbon nano-structures deposited by microwave plasma electron cyclotron resonance chemical vapor deposition
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Lin, CH; Chang, HL; Tsai, MH; Kuo, CT |
| 國立交通大學 |
2014-12-08T15:18:10Z |
Growth mechanism and properties of the well-aligned-carbon-coated Si nanocones by MPCVD
|
Chuang, PK; Teng, IJ; Wang, WH; Kuo, CT |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Growth mechanism of atomic layer deposited Al2O3 on GaAs (001)-4$\\times$ 6 surface with trimethylaluminum and water as precursors
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Huang, ML;Chang, YH;Lin, TD;Lin, HY;Liu, YT;Pi, TW;Hong, M;Kwo, J; Huang, ML; Chang, YH; Lin, TD; Lin, HY; Liu, YT; Pi, TW; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Growth mechanism of atomic layer deposited Al2O3on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors
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Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG |
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