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顯示項目 468826-468835 / 2348971 (共234898頁)
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| 國立交通大學 |
2017-04-21T06:49:09Z |
High peak power output of a diode-pumped Q-switched and mode locked Nd : LuVO4 with Cr : YAG saturable absorber
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Lin, Ja-Hon; Wei, Ming-Dar; Hsu, Hsin-Han; Hsieh, Wen-Feng |
| 臺大學術典藏 |
2020-05-12T02:53:47Z |
High percolative BaTiO3-Ni nanocomposites
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Tuan, W.-H.; Huang, Y.-C.; WEI-HSING TUAN |
| 國立交通大學 |
2017-04-21T06:49:11Z |
High Perfonnance InAs-Channel HEMT for Low Voltage Milimeter Waive Applications
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Hsu, Heng-Tung; Chang, Chia-Yuan; Chang, Edward Yi; Ku, Chien-, I; Miyamoto, Yasuyuki |
| 國立臺灣大學 |
2006-05 |
High Perforance Hole-injuction and Hole-transport Polyurethanes for Light-Emitting Diodes Applications
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Kuo, C. H.; Peng, K. C.; Kuo, L. C.; Yang, K. H.; Lee, J. H.; Leung, M. K.; Hsieh, K. H. |
| 臺大學術典藏 |
1992 |
High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy
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Wu, Chung Cheng; Lu, Shey-Shi; Lee, Si-Chen; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; 呂學士; 李嗣涔; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; Lu, Shey-Shi; Lee, Si-Chen; Williamson, F.; Nathan, M. I. |
| 國立臺灣大學 |
1992 |
High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy
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Wu, Chung Cheng; 呂學士; 李嗣涔; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; Lu, Shey-Shi; Lee, Si-Chen; Williamson, F.; Nathan, M. I. |
| 國立交通大學 |
2014-12-08T15:45:36Z |
High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantation
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Chang, SJ; Chang, CY; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:25:55Z |
High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser
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Kuo, HC; Chang, YH; Lai, FI; Lee, PT; Wang, SC |
| 國立成功大學 |
2003-04 |
High performance 12 GHz enhancement-mode pseudomorphic HEMT prepared by He plus reactive ion etching
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Lin, C. S.; Fang, Yean-Kuen; Ting, S. F.; Wang, C. C.; Huang, H. K.; Wu, C. L.; Chang, C. S. |
| 國立交通大學 |
2014-12-08T15:36:17Z |
High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate
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Shieh, Chen-Yu; Tsai, Ming-Ta; Li, Zhen-Yu; Kuo, Hao-Chung; Chang, Jeng-Yang; Chi, Gou-Chung; Lee, Wei-I |
顯示項目 468826-468835 / 2348971 (共234898頁)
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