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顯示項目 527391-527400 / 2348973 (共234898頁)
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機構 日期 題名 作者
國立交通大學 2014-12-08T15:14:52Z Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method Huang, Hung-Wen; Kao, Chih-Chiang; Chu, Jung-Tang; Wang, Wei-Chih; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; Yu, Chang-Chin; Kuo, Shou-Yi
國立交通大學 2014-12-08T15:10:35Z Investigation of InGaN/GaN power chip light emitting diodes with TiO(2)/SiO(2) omnidirectional reflector Huang, H. W.; Lin, C. H.; Yu, C. C.; Lee, B. D.; Kuo, H. C.; Leung, K. M.; Wang, S. C.
國立高雄師範大學 2004 Investigation of InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches Jung-Hui Tsai;Yu-Jui Chu;Jeng-Shyan Chen;King-Poul Zhu; 蔡榮輝
國立成功大學 1998-06 Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor Wang, Wei-Chou; Cheng, Shiou-Ying; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau
國立成功大學 2003-11 Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia; Lin, Yu-Shyan
國立高雄師範大學 1996 Investigation of InGaP/GaAs multiple-differential-resistance (NDR) device prepared by MOCVD Jung-Hui Tsai;Wen-Chau Liu;Kong-Beng Thei;Chin-Chuan Cheng;Kun-Wei Lin;H. R. Chen,; 蔡榮輝
國立高雄師範大學 2010 Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor Jung-Hui Tsai;Wen-Shiung Lour;Chia-Hong Huang;Ning-Feng Dale;Yuan-Hong Lee;Jhih-Syuan Sheng;Wen-Chau Liu; 黃嘉宏
國立臺灣海洋大學 2010-03 Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor Jung-HuiTsai ab aaacd; Wen-ShiungLour; Chia-HongHuang; Ning-FengDale; Yuan-HongLee; Jhih-SyuanSheng; Wen-ChauLiu
國立臺灣海洋大學 2010-03 Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor Jung-Hui Tsai; Wen-Shiung Lour; Chia-Hong Huang; Ning-Feng Dale; Yuan-Hong Lee; Jhih-Syuan Sheng; Wen-Chau Liu
國立高雄師範大學 2008 Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages Jung-Hui Tsai;Tzu-Yen Wen;King-Poul Zhu; 蔡榮輝

顯示項目 527391-527400 / 2348973 (共234898頁)
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