| 國立交通大學 |
2014-12-08T15:39:12Z |
Leakage behavior of the quasi-superlattice stack for multilevel charge storage
|
Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立中山大學 |
2004 |
Leakage behavior of the quasi-superlattice stack for multilevel charge storage
|
T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;H.H. Wu;S.M. Sze |
| 淡江大學 |
2002-02 |
Leakage characteristics in a channel consisting of a serrated wall
|
杜文謙 |
| 淡江大學 |
1998-02 |
Leakage characteristics of brush mounted labyrinth seal with rotating speed
|
Miyake, Kunihiro; 杜文謙; Duh, Wen-chien |
| 淡江大學 |
1999-02 |
Leakage Characteristics of Brush-Mounted Labyrinth Seal With Rotating Speed
|
Miyake, Kunihiro; 杜文謙; Tu, Wen-ching |
| 淡江大學 |
1990-08 |
Leakage Characteristics of Labyrinth Seal
|
三宅範博;杜文謙 |
| 國立交通大學 |
2014-12-08T15:19:10Z |
Leakage conduction behavior in electron-beam-cured nanoporous silicate films
|
Liu, PT; Tsai, TM; Chang, TC |
| 國立中山大學 |
2005 |
Leakage conduction behavior in electron-beam-cured nanoporous silicate films
|
P.T. Liu;T.M. Tsai;T.C. Chang |
| 國立彰化師範大學 |
2010-12 |
Leakage Conduction Mechanism of Top-contact Organic Thin Film Transistors
|
Lin, Yow-Jon |
| 國立聯合大學 |
2010 |
Leakage coupling of ultrasensitive periodical silica thin-film long-period grating coated on tapered fiber
|
Cheng-Ling Lee*, Z.-Y. Weng, C.-J. Lin, Y.-Y. Lin |
| 南台科技大學 |
2007 |
Leakage current analysis of nitride based optoelectronics by emission microscopy inspection
|
Y. Z. Chiou; K. W. Lin |
| 南台科技大學 |
2008-09 |
Leakage Current Analysis of Nitride-Based Photodetectors by Emission Microscopy Inspection
|
Y. Z. Chiou |
| 國立交通大學 |
2014-12-16T06:14:24Z |
Leakage current cut-off device for ternary content addressable memory
|
Huang; Po-Tsang; Liu; Wen-Yen; Hwang; Wei |
| 國立交通大學 |
2014-12-16T06:15:48Z |
Leakage current cut-off device for ternary content addressable memory
|
Huang, Po-Tsang; Liu, Wen-Yen; Hwang, Wei |
| 國立高雄師範大學 |
2002-12 |
Leakage Current Improvement of AlGaN/GaN HFETs by High Resistive Mg-Doped GaN Layer
|
Ruey-Lue Wang;S. C. Wei;Y. K. Su;S. J. Chang;R. L. Wang;T. H. Hsu; 王瑞祿 |
| 國立中山大學 |
2007 |
Leakage Current Improvement of Liquid Phase Deposited TixSi(1-x)Oy Films on Amorphous Silicon with Ammonium Hydroxide Incorporation by Post Metallization Annealing
|
Ming-Kwei Lee; Hung-Chang Lee; Chih-Te Chang; Chih-Min Hsu |
| 國立交通大學 |
2014-12-08T15:15:07Z |
Leakage current improvement of Ni/TiNiO/TaN metal-insulator-metal capacitors using optimized N+ plasma treatment and oxygen annealing
|
Huang, C. C.; Cheng, C. H.; Chin, Albert; Chou, C. P. |
| 修平科技大學 |
2004-03 |
Leakage Current Mechanisms in Rapid Thermal Annealed LiTaO3 Thin Films Prepared by a Diol-Based Sol-Gel Method
|
M. C. Kao;Y. C. Chen;H. Z. Chen;C. M. Wang;Yi-Ju Li |
| 國立中山大學 |
2004 |
Leakage Current Mechanisms in Rapid Thermal Annealed LiTaO3 Thin Films Prepared by a Diol-Based Sol-Gel Method
|
M.C. Kao; Y.C. Chen; H.Z. Chen; C.M. Wang; Y.J. Li |
| 國立中山大學 |
2003-08 |
Leakage Current Mechanisms in Rapid Thermal Annealed LiTaO3 Thin Films Prepared by a Diol-Based Sol-Gel Method
|
M.C. Kao;Y.C. Chen;H.Z. Chen;C.M. Wang;Y.J. Li |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O
|
Sun, SC; Chen, TF |
| 國立交通大學 |
2019-04-02T05:58:30Z |
Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O
|
Sun, SC; Chen, TF |
| 國立交通大學 |
2014-12-08T15:46:43Z |
Leakage current reduction of chemical-vapor-deposited Ta2O5 films on rugged polycrystalline silicon electrode for dynamic random access memory application
|
Lin, M; Chang, CY; Huang, TY; Shieh, WY |
| 國立彰化師範大學 |
2011-05 |
Leakage Currents Through In/MgO/n-type Si/In Structures
|
Tsao, Hou-Yen; Lin, Yow-Jon; Chen, Ya-Hui; Chang, Hsing-Cheng |
| 臺大學術典藏 |
2018-09-10T05:29:10Z |
Leakage effects of laminated composite ground plane on the microstrip lines propagation properties
|
J.-F. Kiang; J.-F. Kiang; JEAN-FU KIANG |
