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顯示項目 615176-615225 / 2348973 (共46980頁)
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機構	日期	題名	作者
國立交通大學	2014-12-08T15:16:20Z	Nitride-based LEDs with nano-scale textured sidewalls using natural lithography	Huang, HW; Kuo, HC; Chu, JT; Lai, CF; Kao, CC; Lu, TC; Wang, SC; Tsai, RJ; Yu, CC; Lin, CF
國立成功大學	2003-12	Nitride-based LEDs with p-InGaN capping layer	Chang, Shoou-Jinn; Chen, C. H.; Chang, Ping-Chuan; Su, Yan-Kuin; Chen, Ping-Cheng; Jhou, Y. D.; Hung, H.; Wang, S. M.; Huang, Bohr-Ran
實踐大學	2009	Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls	Kuo, D.S.;Chang, S.J.;Ko, T.K.;Shen, C.F.;Hon, S.J.;Hung, S.C.
國立成功大學	2009-04-15	Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls	Kuo, D. S.; Chang, Shoou-Jinn; Ko, T. K.; Shen, C. F.; Hon, S. J.; Hung, S. C.
國立成功大學	2003	Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer	Kuo, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; �Sheu, �Jinn-Kong; Tsai, J. M.
國立成功大學	2004-03	Nitride-based LEDs with textured side walls	Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Ching-Ting; Lin, Y. C.; Lai, W. C.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M.
國立成功大學	2005-08	Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures	Jhou, Y. D.; Chen, Chin-Hsing; Chuang, Ricky Wen-kuei; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, Ping-Chuan; Chen, Po-Chang; Hung, H.; Wang, S. M.; Yu, C. L.
國立成功大學	2007-07-02	Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography	Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Kuo, C. T.; Ko, T. K.; Shei, Shih-Chang; Sheu, Jinn-Kong
國立成功大學	2003-02	Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, Liang-Wen; Chen, Jone F.; Sheu, Jinn-Kong; Tsai, Ji-Ming
南台科技大學	2006-12	Nitride-based light emitting diodes with textured sidewalls and pillar waveguides	C. F. Shen; S. J. Chang; T. K. Ko; C. T. Kuo; S. C. Shei; W. S. Chen; C. T. Lee; C. S. Chang;Y. Z. Chiou
國立成功大學	2006-11	Nitride-based light emitting diodes with textured sidewalls and pillar waveguides	Shen, C. F.; Chang, Shoou-Jinn; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang; Chen, W. S.; Lee, Ching-Ting; Chang, C. S.; Chiou, Yu-Zung
國立成功大學	2008-05-01	Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures	Ji, L. W.; Young, Sheng-Joue; Liu, C. H.; Water, W.; Meen, Teen-Hang; Jywe, W. Y.
臺大學術典藏	2022-05-24T06:26:44Z	Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures	Ji L.W.;Young S.J.;Liu C.H.;Water W.;Meen T.H.;Jywe W.Y.; Ji L.W.; Young S.J.; Liu C.H.; Water W.; Meen T.H.; Jywe W.Y.; Wen-Yuh Jywe
國立成功大學	2004-12	Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers	Ji, L. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Hung, S. C.; Chang, C. S.; Wu, L. W.
國立成功大學	2002-12	Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts	Lin, Yi-Chao; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Chang, C. S.; Shei, Shih-Chang; Hsu, S. J.; Liu, Chun-Hsing; Liaw, U. H.; Chen, S. C.; Huang, Bohr-Ran
國立成功大學	2005-10	Nitride-based light-emitting diodes with p-AlInGaN surface layers	Kuo, Chih-Hung; Lin, C. C.; Chang, Shoou-Jinn; Hsu, Y. P.; Tsai, J. M.; Lai, W. C.; Wang, P. T.
國立成功大學	2009-07	Nitride-based metal-insulator-semiconductor capacitors with liquid-phase deposition oxide and (NH4)(2)S-x pretreatment prepared on sapphire substrates	Lan, C. H.; Hwang, J. D.; Chang, Shoou-Jinn; Lin, Y. C.; Cheng, Y. C.; Lin, Web-Jen; Lin, J. C.; Chang, K. J.
國立成功大學	2006-10	Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers	Chang, Shoou-Jinn; Yu, C. L.; Chang, Ping-Chuan; Lin, Y. C.; Chen, Chin-Hsiang
國立成功大學	2006-10	Nitride-based MIS-like photodiodes with semiinsulating Mg-doped GaN cap layers	Chang, Shoou-Jinn; Yu, Chia-Lin; Chuang, Ricky Wenkuei; Chang, Ping-Chuan; Lin, Y. C.; Jhan, Y. W.; Chen, C. H.
國立成功大學	2005-06	Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers	Wei, Sun-Chin; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, Shi-Ming; Li, W. L.
國立成功大學	2008	Nitride-Based MSM Photodetectors with a HEMT Structure and a Low-Temperature AlGaN Intermediate Layer	Lee, K. H.; Chuang, Ricky W.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Wang, Y. C.; Yu, C. L.; Lin, J. C.; Wud, S. L.
國立成功大學	2005-03	Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts	Su, Yan-Kuin; Chang, Ping-Chuan; Chen, Chin-Hsiang; Chang, Shoou-Jinn; Yu, Chia-Lin; Lee, Ching-Ting; Lee, H. Y.; Gong, J.; Chen, Po-Chang; Wang, C. H.
東海大學	2005	Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts	Su, Y.K.a, Chang, P.C.a, Chen, C.H.b, Chang, S.J.a , Yu, C.L.a, Lee, C.T.a, Lee, H.Y.a, Gong, J.c, Chen, P.C.d, Wang, C.H.d
國立成功大學	2003-05	Nitride-based multiquantum well p-n junction photodiodes	Su, Yan-Kuin; Chang, Shoou-Jinn; Chiou, Yu-Zung; Tsai, Tzong-Yow; Gong, Jeng; Lin, Yi-Chao; Liu, Sen-Hai; Chang, Chia-Sheng
東海大學	2003	Nitride-based multiquantum well p-n junction photodiodes	Su, Y.-K.a, Chang, S.-J.a , Chiou, Y.-Z.a, Tsai, T.-Y.a, Gong, J.b, Lin, Y.-C.a, Liu, S.-H.a, Chang, C.-S.
國立成功大學	2003	Nitride-based near UV MQW LEDs with AlGaN barrier layers	Chang, S. J.; Kuo, C. H.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Chen, J. F.; Tsai, J. M.
國立成功大學	2004-01-15	Nitride-based near-ultraviolet LEDs with an ITO transparent contact	Kuo, C. H.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, R. W.; Chang, C. S.; Wu, L. W.; Lai, W. C; Chen, Jenn-Fang; Sheu, J.; Lo, H. M.; Tsai, J. M.
國立成功大學	2003	Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers	Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen
南台科技大學	2005-03	Nitride-based p-i-n bandpass photodetectors	Yu-Zung Chiou
南台科技大學	2005	Nitride-based p-i-n photodetectors with ITO p-contacts	T. K. Ko; S. J. Chang; Y. K. Su; Y. Z. Chiou; C. S. Chang; S. C. Shei; W. S. Chen; C. F. Shen
國立成功大學	2008-05-16	Nitride-based photodetectors with unactivated Mg-doped GaN cap layer	Lam, K. T.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Yu, C. L.; Lin, Y. C.; Sun, Y. X.; Chen, C. H.
國立成功大學	2006-01	Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications	Shi, Jin-Wei; Huang, H. Y.; Sheu, Jinn-Kong; Hsieh, S. H.; Wu, Y. S.; Lu, J. Y.; Huang, F. H.; Lai, W. C.
國立成功大學	2007-05	Nitride-based Schottky barrier sensor module with high electrostatic discharge reliability	Horng, J. J.; Su, Yan-Kuin; Chang, Shoou-Jinn; Ko, T. K.; Shei, Shih-Chang
國立成功大學	2003-07-25	Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching	Su, Yan-Kuin; Chang, Shoou-Jinn; Kuan, T. M.; Ko, C. H.; Webb, J. B.; Lan, W. H.; Cherng, Ya-Tung; Chen, S. C.
國立交通大學	2014-12-08T15:09:54Z	Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface	Lee, Chia-En; Lai, Chun-Feng; Lee, Yea-Chen; Kuo, Hao-Chung; Lu, Tien-Chang; Wang, Shing-Chung
國立成功大學	2003-05	Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer	Sheu, Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsa, J. M.
國立成功大學	2006-05	Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes	Chang, Shoou-Jinn; Yu, Chia-Lin; Chen, C. H.; Chang, Ping-Chuan; Huang, K. C.
國立成功大學	2006-10	Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layers	Yu, C. L.; Chang, Shoou-Jinn; Chang, Ping-Chuan; Lin, Y. C.; Lee, Ching-Ting
大葉大學	2005-10	Nitride-Based UV Metal-Insulator semiconductor Photodetector with Liquid-Phase-Deposition Oxide	Hwang, Jun-Dar;Yang, G.H.;Yang, Y.Y.;Yao, P.C.
大葉大學	2005-08	Nitride-based UV metal-insulator-semiconductor photodetector with liquid-phase-deposition oxide	Hwang, J. D.;Yang, Gwo Huei;Yang, Yuan Yi;Yao, Pin Chuan
國立交通大學	2020-07-01T05:21:20Z	Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime	Kuo, Yu-Hong; Chiu, Shih-Hsuan; Tien, Che-Wei; Lin, Sheng-Di; Chang, Wen-Hao; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen
國立臺灣科技大學	1988	Nitriding in the High Temperature Oxidation of Fe-31Mn- 9Al-6Cr Alloy	C.J.Wang;J.G.Duh
國立臺灣科技大學	1988	Nitriding in the High Temperature Oxidation of Fe-31Mn-9Al-6Cr Alloy	C.J.Wang ;J.G.Duh
國立臺灣科技大學	1990	Nitriding Kinetics of Fe-Al-Mn-Cr-C Alloys at 1000℃	J.G.Duh;C.J.Wang
國立臺灣科技大學	1990	Nitriding Kinetics of Fe-Al-Mn-Cr-C Alloys at 1000℃.	J.G.Duh ;C.J.Wang
淡江大學	2012	Nitriding treatment enhance wear performance of Al/Fe alloys in situ composite	林清彬
淡江大學	2015-12-17	Nitriding treatment enhance wear performance of Al/Fe alloys in situ composite	Chang, Zue-Chin;Lin, C. B.;Ho, Jin-Shin;Peng, X. R.
淡江大學	2012-03-08	Nitriding treatment enhance wear performance of Al/Fe alloys in situ composite..	Chang, Zue-Chin;Lin, C. B.;Ho, Jin-Shin;Peng, X. R.
國立交通大學	2014-12-08T15:02:33Z	Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOS	Lin, YH; Lai, CS; Lee, CL; Lei, TF; Chao, TS
國立聯合大學	2003	Nitrification efficiency and nitrifying bacteria abundance in combined AS-biofilm and A2O systems	You S. J., Hsu C. L., Chuang S. H. and Ouyang C. F.

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