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Institution	Date	Title	Author
國立臺灣大學	2003-10	1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties	Mao, M.H.; Wu, T.Y.; Chang, F.Y.; Lin, H.H.
國立東華大學	2003-09	1.3 micron single lateral mode lasers based on InAs QDs and InGaAsN quantum wells	祁錦雲; Jim-Yong Chi; A.R.Kovsh; D.A.Livshits; N.A.Maleev; A.E.Zhukov; V.M.Ustinov; J.S.Wang; R.S.Hsiao; G.Lin; J.Y.Chi; N.N.Ledentsov
國立中山大學	1988	1.3 mm Cobalt-Doped Current Blocking Layers Grown by MOCVD	W.H. Cheng;J. Pooladdej;S.Y. Huang;K.D. Buehring;A. Appelbaum;D. Wolf;D. Renner
國立中山大學	1992-07	1.3 mm InGaAsP Fabry-Perot Lasers with Reduced Pulse Jitter and Power Penalty	W.H. Cheng; J.M. Dugan;J.C. Miller; D. Renner;T.C. McDermott; C.B. Su
國立成功大學	2004-07-25	1.3 mu m InAs quantum dot resonant cavity light emitting diodes	Su, Yan-Kuin; Yu, H. C.; Chang, Shoou-Jinn; Lee, C. T.; Wang, J. S.; Kovsh, A. R.; Wu, Y. T.; Lin, K. F.; Huang, C. Y.
國立交通大學	2014-12-08T15:18:11Z	1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection	Peng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC
國立成功大學	2009	1.3 mu m Strain-Compensated InGaAsP Planar Buried Heterostructure Laser Diodes with a TO-Can Package for Optical Fiber Communications	Tsai, Chia-Lung; Chou, Yi-Lun; Wang, Y. S.; Chang, Shoou-Jinn; Wu, Meng-Chyi; Lin, W.
國立虎尾科技大學	2007	1.3 μm Ga0.11In0.89As0.24P0.76/Ga0.27In0.73As0.67P0.33 compressive-strain multiple quantum well with n-type modulation-doped GaInP intermediate-barrier laser diodes	Lei, Po-Hsun
國立臺灣大學	2004-02-05	1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy	Liu, P.W.; Liao, G.H.; Lin, H.H.
國立臺灣大學	2004	1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy	Liu, P.-W.; Liao, G.-H.; Lin, H.-H.

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