| 國立交通大學 |
2020-07-01T05:21:19Z |
Atomic Imaging of Molybdenum Oxide Nanowires with Unique and Complex Periodicity by Advanced Electron Microscopy
|
Ting, Yi-Hsin; Huang, Chun-Wei; Yasuhara, Akira; Chen, Sheng-Yuan; Chen, Jui-Yuan; Chang, Li; Lu, Kuo-Chang; Wu, Wen-Wei |
| 國立成功大學 |
2020-03-11 |
Atomic Imaging of Molybdenum Oxide Nanowires with Unique and Complex Periodicity by Advanced Electron Microscopy
|
Ting;Yi-Hsin;Huang;Chun-Wei;Yasuhara;Akira;Chen;Sheng-Yuan;Chen;Jui-Yuan;Chang;Li;Lu;Kuo-Chang;Wu;Wen-Wei |
| 淡江大學 |
2025-07-31T04:05:17Z |
Atomic Insights into the Competitive Edge of Nanosheets Splitting Water
|
Falling, Lorenz J.;Jang, Woosun;Laha, Sourav;Götsch, Thomas;Terban, Maxwell W.;Bette, Sebastian;Mom, Rik;Juan-Jesús, Velasco-Vélez;Girgsdies, Frank;Teschner, Detre;Tarasov, Andrey;Chuang, Cheng-Hao;Lunkenbein, Thomas;Axel, Knop-Gericke;Weber, Daniel;Dinnebier, Robert;Lotsch, Bettina V.;Schlögl, Robert;Jones, Travis E. |
| 臺大學術典藏 |
2018-09-10T09:46:19Z |
Atomic ionization of germanium by neutrinos from an ab initio approach
|
JIUNN-WEI CHEN; JIUNN-WEI CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
|
Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
|
Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-02-21T23:30:43Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
|
Wang, Chun Yuan; Chou, Chun Yi; Shiue, Han Fang; Chen, Hsing Yang; Ling, Chen Hsiang; Shyue, Jing Jong; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
|
Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 國立交通大學 |
2019-10-05T00:08:38Z |
Atomic layer defect-free etching for germanium using HBr neutral beam
|
Fujii, Takuya; Ohori, Daisuke; Noda, Shuichi; Tanimoto, Yosuke; Sato, Daisuke; Kurihara, Hideyuki; Mizubayashi, Wataru; Endo, Kazuhiko; Li, Yiming; Lee, Yao-Jen; Ozaki, Takuya; Samukawa, Seiji |
| 臺大學術典藏 |
2021-08-05T02:41:02Z |
Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
|
Wang C.-I;Chang T.-J;Yin Y.-T;Jiang Y.-S;Shyue J.-J;Chen M.-J.; Wang C.-I; Chang T.-J; Yin Y.-T; Jiang Y.-S; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-02-04T02:27:39Z |
Atomic layer deposited Al 2 O 3 films on NiTi shape memory alloys for biomedical applications
|
Lin, H.-C.;Chang, Y.-L.;Han, Y.-Y.;Yang, K.-C.;Chen, M.-C.; Lin, H.-C.; Chang, Y.-L.; Han, Y.-Y.; Yang, K.-C.; Chen, M.-C.; HSIN-CHIH LIN |
| 國立臺灣科技大學 |
2014 |
Atomic layer deposited Al2O3 barrier layers on flexible PET substrates
|
Chang R.-C., Hou H.-T., Tsai F.-T., Jhu P.-S. |
| 臺大學術典藏 |
2020-09-29T05:32:21Z |
Atomic layer deposited Al2O3 films on NiTi shape memory alloys for biomedical applications
|
Chen M.-C.; Yang K.-C.; YIN-YI HAN; Lin H.-C.;Chang Y.-L.;Yin-Yi Han;Yang K.-C.;Chen M.-C.; Lin H.-C.; Chang Y.-L. |
| 臺大學術典藏 |
2021-07-26T09:44:18Z |
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
|
Young L.B;Cheng C.-K;Lu G.-J;Lin K.-Y;Lin Y.-H;Wan H.-W;Li M.-Y;Cai R.-F;Lo S.-C;Hsu C.-H;Kwo J;Hong M.; Young L.B; CHIA-KUEN CHENG et al. |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
|
Young, L.B.;Cheng, C.-K.;Lu, G.-J.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Li, M.-Y.;Cai, R.-F.;Lo, S.-C.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2022-03-22T08:27:37Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:38Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:36Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2021-09-21T23:19:32Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang, Chin I.; Wang, Chun Yuan; Chang, Teng Jan; Jiang, Yu Sen; Shyue, Jing Jong; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:37Z |
Atomic layer deposited TiO2 films on an equiatomic NiTi shape memory alloy for biomedical applications
|
Abbas A;Hung H.-Y;Lin P.-C;Yang K.-C;Chen M.-C;Lin H.-C;Han Y.-Y.; Abbas A; Hung H.-Y; Lin P.-C; Yang K.-C; Chen M.-C; Lin H.-C; Han Y.-Y.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:30:36Z |
Atomic layer deposited TiO2 films on an equiatomic NiTi shape memory alloy for biomedical applications
|
Abbas A;Hung H.-Y;Lin P.-C;Yang K.-C;Chen M.-C;Lin H.-C;Han Y.-Y.; Abbas A; Hung H.-Y; Lin P.-C; Yang K.-C; Chen M.-C; Lin H.-C; Han Y.-Y.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:30:38Z |
Atomic layer deposited TiO2 films on an equiatomic NiTi shape memory alloy for biomedical applications
|
Abbas A;Hung H.-Y;Lin P.-C;Yang K.-C;Chen M.-C;Lin H.-C;Han Y.-Y.; Abbas A; Hung H.-Y; Lin P.-C; Yang K.-C; Chen M.-C; Lin H.-C; Han Y.-Y.; HSIN-CHIH LIN |
