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Showing items 214371-214380 of 2348487 (234849 Page(s) Totally) << < 21433 21434 21435 21436 21437 21438 21439 21440 21441 21442 > >> View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:02:34Z |
AuGePt ohmic contact to n-type InP
|
Huang, WC; Lee, CL |
| 國立交通大學 |
2019-04-02T05:59:11Z |
AuGePt ohmic contact to n-type InP
|
Huang, WC; Lee, CL |
| 國立臺灣大學 |
1986-04 |
Auger In-Depth Profiling of Ag Layer epitaxially Grown on Pb (111) Surface: A Direct Evidence of Substrate Diffusion
|
CHEN, CH; SANSALONE, FJ |
| 國立交通大學 |
2014-12-08T15:27:03Z |
Auger recombination enhanced hot carrier degradation in nMOSFETs with positive substrate bias
|
Chiang, LP; Tsai, CW; Wang, T; Liu, UC; Wang, MC; Hsia, LC |
| 國立高雄師範大學 |
2008 |
Auger recombination in InN thin films
|
李孟恩; D. J. Jang;G. T. Lin;C. L. Hsiao;L. W. Tu;Meng-En Lee |
| 國立中山大學 |
2008 |
Auger recombination in InN thin films
|
D.J. Jang;G.T. Lin;C.L. Hsiao;L.W. Tu;M.E. Lee |
| 國立成功大學 |
2016-11 |
Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes
|
Kuo, Yen-Kuang; Wang, Tsun-Hsin; Chang, Yi-An; Chang, Jih-Yuan; Chen, Fang-Ming; Shih, Ya-Hsuan |
| 國立交通大學 |
2014-12-08T15:41:07Z |
Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate bias
|
Tsai, CW; Chen, MC; Ku, SH; Wang, TH |
| 義守大學 |
2010-04 |
Augment in the Homeric Hymn to Hermes
|
Ichiro Taida |
| 國立成功大學 |
2016-10 |
Augmentation by cerclage wire improves fixation of vertical shear femoral neck fractures-A biomechanical analysis
|
Kuan, Fa-Chuan; Yeh, Ming-Long; Hong, Chih-Kai; Chiang, Florence L.; Jou, I-Ming; Wang, Ping-Hui; Su, Wei-Ren |
Showing items 214371-214380 of 2348487 (234849 Page(s) Totally) << < 21433 21434 21435 21436 21437 21438 21439 21440 21441 21442 > >> View [10|25|50] records per page
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