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Showing items 379251-379275 of 2349123 (93965 Page(s) Totally) << < 15166 15167 15168 15169 15170 15171 15172 15173 15174 15175 > >> View [10|25|50] records per page
| 東方設計學院 |
2009-09-01 |
Electrical properties of p-ZnO/n-Si heterjunction formed by RF magnetron sputter
|
Wu, Sean; Lee, Maw-Shung; Jhong, Shih-Bin; Liu, Kuan-Ting; Chang, Yee-Shin; Hsiao, Yu-Jen; 吳信賢; (東方技術學院電子與資訊系) |
| 中國文化大學 |
2007 |
Electrical properties of pressure quenched silicon by thermal spraying
|
Tan, S. Y.; Gambino, R. J.; Sampath, S.; Herman, H. |
| 國立彰化師範大學 |
2004-03 |
Electrical Properties of Pt Contacts on p-GaN Activated in Air
|
Lin, Yow-Jon; Wu, Kuo-Chen |
| 國立交通大學 |
2014-12-08T15:46:52Z |
Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films
|
Lee, CJ; Huang, LT; Ezhilvalavan, S; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:17:04Z |
Electrical properties of resistance switching V-doped SrZrO3 films on textured LaNiO3 bottom electrodes
|
Liu, CY; Wang, A; Jang, WY; Tseng, TY |
| 國立臺灣科技大學 |
2017 |
Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10−9 A and a high rectification ratio above 105
|
Tuan, Tuan T.T.A;Kuo, D.-H;Saragih, A.D;Li, G.-Z. |
| 國立交通大學 |
2014-12-08T15:43:51Z |
Electrical properties of shallow p(+)-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxy
|
Huang, HJ; Chen, KM; Chang, CY; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:33:54Z |
Electrical properties of SiGe nanowire following fluorine/nitrogen plasma treatment
|
Chang, Kow-Ming; Chen, Chu-Feng; Lai, Chiung-Hui; Kuo, Po-Shen; Chen, Yi-Ming; Chang, Tai-Yuan |
| 國立交通大學 |
2014-12-08T15:41:57Z |
Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD
|
Chang, KM; Cheng, CC; Lang, CC |
| 國立交通大學 |
2014-12-08T15:09:35Z |
Electrical properties of single and multiple poly(3,4-ethylenedioxythiophene) nanowires for sensing nitric oxide gas
|
Lu, Hui-Hsin; Lin, Chia-Yu; Hsiao, Tzu-Chien; Fang, Yueh-Yuan; Ho, Kuo-Chuan; Yang, Dongfang; Lee, Chih-Kung; Hsu, Su-Ming; Lin, Chii-Wann |
| 國立臺灣大學 |
2009-04 |
Electrical properties of single and multiple poly(3,4-ethylenedioxythiophene) nanowires for sensing nitric oxide gas
|
Lu, HH; Lin, CY; Hsiao, TC; Fang, YY; Ho, KC; Yang, DF; Lee, CK; Hsu, SM; Lin, CW |
| 臺大學術典藏 |
2018-09-10T07:29:42Z |
Electrical properties of single and multiple poly(3,4-ethylenedioxythiophene) nanowires for sensing nitric oxide gas
|
Lu, HH;Lin, CY;Hsiao, TC;Fang, YY;Ho, KC;Yang, DF;Lee, CK;Hsu, SM;Lin, CW; Lin, CY; Hsiao, TC; Fang, YY; Ho, KC; Yang, DF; Lee, CK; Hsu, SM; Lin, CWLu, H.-H.; Lin, C.-Y.; Hsiao, T.-C.; Fang, Y.-Y.; Ho, K.-C.; Yang, D.; Lee, C.-K.; Hsu, S.-M.; Lin, C.-W.; Lu, HH; Lin, CY; Hsiao, TC; Fang, YY; Ho, KC; Yang, DF; Lee, CK; Hsu, SM; Lin, CW; CHII-WANN LIN; KUO-CHUAN HO |
| 臺大學術典藏 |
2020-04-28T07:12:18Z |
Electrical properties of single and multiple poly(3,4-ethylenedioxythiophene) nanowires for sensing nitric oxide gas
|
Yang, D.; Lee, C.-K.; Hsu, S.-M.; Lin, C.-W.; CHIH-KUNG LEE; Lu, H.-H.;Lin, C.-Y.;Hsiao, T.-C.;Fang, Y.-Y.;Ho, K.-C.;Yang, D.;Lee, C.-K.;Hsu, S.-M.;Lin, C.-W.; Lu, H.-H.; Lin, C.-Y.; Hsiao, T.-C.; Fang, Y.-Y.; Ho, K.-C. |
| 國立高雄師範大學 |
2003 |
Electrical Properties of single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with camel-like gate structure
|
Jung-Hui Tsai;King-Poul Zhu; 蔡榮輝 |
| 大葉大學 |
2006-12 |
Electrical properties of SiO2/n-GaN metal oxide semiconductor with Liquid-Phase-Deposition Oxide
|
Hwang, Jun-Dar;Lin, T. C. |
| 淡江大學 |
2013-11 |
Electrical Properties of Sm-doped Ceria (SDC) and SDC Carbonate Composite
|
Wen, L.C.; Hsieh, C. Y.; Tsai, Y. I.; Lin, H. K.; Chang, S. C.; Kao, H.-C.I.; Sheu, H.S.; Lee, M.C.; Lee, Y.S. |
| 國立成功大學 |
2022 |
Electrical Properties of Spin-coated Indium Tin Oxide for Photosensor Applications
|
Shi, Shi S.-C.;Chen, J.-A.;Lin, Y.-F.;Wang, C.-C. |
| 國立交通大學 |
2014-12-08T15:39:50Z |
Electrical properties of sputter deposited SrTiO3 gate dielectrics
|
Liu, CY; Tseng, TY |
| 大葉大學 |
2006-08 |
Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN
|
Hwang, J. D.;Lin, C.C.;Chen, W.L. |
| 大葉大學 |
2008-01-28 |
Electrical properties of Sr-doped lanthanum titanate ceramics
|
Huang, J. W.;Chen, S. Y.;Sung, H. H. |
| 國立交通大學 |
2014-12-08T15:45:43Z |
Electrical properties of Ta2O5 thin films deposited on Cu
|
Ezhilvalavan, S; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:41Z |
Electrical properties of Ta2O5 thin films deposited on Ta
|
Ezhilvalavan, S; Tseng, TY |
| 國立成功大學 |
2001-11-01 |
Electrical properties of TaxNy films by implementing OES in the sputtering system
|
Lu, Yang-Ming; Weng, R. J.; Hwang, Weng-Sing; Yang, Y. S. |
| 國立高雄第一科技大學 |
2001.11 |
Electrical properties of TaxNy films by implementing OES in the sputtering system
|
Y.M.Lu;R.J.Weng;W.S.Hwang;Y.S.Yang; 楊玉森 |
| 淡江大學 |
2015-05 |
Electrical properties of the (Gd2−xLix)Ti2O7−x co-existence with the LiO0.5 self-flux
|
Wen, Liang-Chang; Tsai, Yun-I; Hsu, Tzu-Huan; Wang, Ching-Hsien; Wu, Mong-Shin; Kao, Huey-Chuen I.; Lee, Maw-Chwain |
Showing items 379251-379275 of 2349123 (93965 Page(s) Totally) << < 15166 15167 15168 15169 15170 15171 15172 15173 15174 15175 > >> View [10|25|50] records per page
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