English  |  正體中文  |  简体中文  |  0  
???header.visitor??? :  52210323    ???header.onlineuser??? :  1254
???header.sponsordeclaration???
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
???ui.leftmenu.abouttair???

???ui.leftmenu.bartitle???

???index.news???

???ui.leftmenu.copyrighttitle???

???ui.leftmenu.link???

???jsp.browse.items-by-title.jump??? [ ???jsp.browse.general.jump2chinese??? ] [ ???jsp.browse.general.jump2numbers??? ] [ A B C D E F G H I J K L M N O P Q R S T U V W X Y Z ]
???jsp.browse.items-by-title.enter???   

Showing items 387616-387625 of 2348487  (234849 Page(s) Totally)
<< < 38757 38758 38759 38760 38761 38762 38763 38764 38765 38766 > >>
View [10|25|50] records per page

Institution Date Title Author
淡江大學 2006 Energy-balanced strategies for hole movement in mobile wireless sensor networks 劉曉蓉; Liu, Hsiao-jung
國立中山大學 2001 Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces T.S. Lay;M. Hong;J. Kwo;J.P. Mannaerts;W.H. Hung;D.J. Huang
臺大學術典藏 2019-12-27T07:49:53Z Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces Lay, T.S.;Hong, M.;Kwo, J.;Mannaerts, J.P.;Hung, W.H.;Huang, D.J.; Lay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG
臺大學術典藏 2001 Energy-band parameters at the GaAs-and GaN-Ga 2 O 3 (Gd 2 O 3) interfaces Hung, Wei-Hsiu; Huang, DJ; MINGHWEI HONG; Mannaerts, JP; Kwo, J; Hong, M; Lay, TS; Lay, TS;Hong, M;Kwo, J;Mannaerts, JP;Hung, Wei-Hsiu;Huang, DJ
臺大學術典藏 2018-09-10T07:34:19Z Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga As Huang, ML;Chang, YC;Chang, YH;Lin, TD;Kwo, J;Hong, M; Huang, ML; Chang, YC; Chang, YH; Lin, TD; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:38Z Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs Huang, M.L.;Chang, Y.C.;Chang, Y.H.;Lin, T.D.;Kwo, J.;Hong, M.; Huang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:34:13Z Energy-band parameters of atomic-layer-deposited Al $ _ ${$2$}$ $ O $ _ ${$3$}$ $ and HfO $ _ ${$2$}$ $ on InxGa $ _ ${$1-x$}$ $ As Huang, ML;Chang, YC;Chang, YH;Lin, TD;Hong, M;Kwo, J; Huang, ML; Chang, YC; Chang, YH; Lin, TD; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2006 Energy-band parameters of atomic-layer-deposition Al2O 3/InGaAs heterostructure MINGHWEI HONG; Hong, M.; Wu, T.B.; Kwo, J.; Lin, T.D.; Chang, C.H.; Chang, Y.C.; Huang, M.L.
臺大學術典藏 2018-09-10T05:56:16Z Energy-band parameters of atomic-layer-deposition Al̃ 2Õ 3/InGaAs heterostructure Huang, ML; Chang, YC; Chang, CH; Lin, TD; Kwo, J; Wu, TB; Hong, M; MINGHWEI HONG
國立交通大學 2014-12-08T15:06:16Z ENERGY-BANDS AND ELECTRON-DENSITY IN BISMUTH WITH A UNIFORM DC MAGNETIC-FIELD CHEN, MH; WU, CC; LIN, CJ

Showing items 387616-387625 of 2348487  (234849 Page(s) Totally)
<< < 38757 38758 38759 38760 38761 38762 38763 38764 38765 38766 > >>
View [10|25|50] records per page