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Showing items 391161-391170 of 2348674 (234868 Page(s) Totally)
<< < 39112 39113 39114 39115 39116 39117 39118 39119 39120 39121 > >>
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| 元智大學 |
Aug-22 |
Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer
|
李清庭; P. Y. Tsai; H. T. N. Nguyen; V. Nagarajan; C. H. Lin; C. F. Dee; S. C. Chen; H. C. Kuo; E. Y. Chang |
| 國立成功大學 |
2004-05 |
Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor
|
Chen, Yen-Wei; Chen, Yeong-Jia; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Lin, Yu-Shyan |
| 義守大學 |
2015-01 |
Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics
|
Chih-Chun Hu;Cheng-En Wu;Hsien-Cheng Lin;Kuan-Wei Lee;Yeong-Her Wang |
| 國立成功大學 |
2020-07 |
Enhancement-Mode InAlN/GaN Power MOSHEMT on Silicon With Schottky Tri-Drain Extension
|
Huang;Yi-Ping;Lee;Ching-Sung;Hsu;Wei-Chou |
| 國立中山大學 |
2006-12 |
Enhancement-mode MOSFETs with TiO2 as gate oxides prepared by MOCVD on Si and LPD on InP treated with (NH4)2Sx
|
M.K. Lee;C.F. Yen;S.H. Lin |
| 臺大學術典藏 |
2018-09-10T05:56:16Z |
Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates
|
Ren, F;Hong, MW;Hobson, WS;Kuo, JM;Lothian, JR;Mannaerts, JP;Kwo, J;Chen, YK;Cho, A'Y; Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:11:32Z |
Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade
|
Chao, Yu-Chiang; Tsai, Hung-Kuo; Zan, Hsiao-Wen; Hsu, Yung-Hsuan; Meng, Hsin-Fei; Horng, Sheng-Fu |
| 義守大學 |
2012-08 |
Enhancement-mode pseudomorphic high-electron-mobility transistor with a nanoscale oxidized GaAs gate
|
Kuan-Wei Lee;Hsien-Cheng Lin;Yeong-Her Wang |
| 國立成功大學 |
2019-06 |
Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications
|
Huang;Yi-Ping;Hsu;Wei-Chou;Liu;Han-Yin;Lee;Ching-Sung |
| 臺大學術典藏 |
2018-09-10T14:57:44Z |
Enhancement-Mode {GaN}-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type {GaN} Cap Layer
|
Liang-Yu Su;Finella Lee;Jian Jang Huang; Liang-Yu Su; Finella Lee; Jian Jang Huang; JIAN-JANG HUANG |
Showing items 391161-391170 of 2348674 (234868 Page(s) Totally)
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