臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Institution	Date	Title	Author
國立臺灣海洋大學	2005	Fringing effects of V-shape gate metal on GaAs/InGa/PInGaAs doped-channel field-effect transistors	H R Chen;W T Chen;M K Hsu;S W Tan;W S Lour
國立交通大學	2014-12-08T15:15:57Z	Fringing electric field effect on 65-nm-node fully depleted silicon-on-insulator devices	Ma, Ming-Wen; Chao, Tien-Sheng; Kao, Kuo-Hsing; Huang, Jyun-Siang; Lei, Tan-Fu
國立臺灣大學	1995-04	Fringing Field Anomaly of a Ferrite Head at Saturation	黃暉理; Kuo, C. S.; Hsieh, Y. D.; Huang, Huei-Li; Kuo, C. S.; Hsieh, Y. D.
國立交通大學	2014-12-08T15:42:17Z	Fringing field effect of the liquid-crystal-on-silicon devices	Chiang, KHF; Wu, ST; Chen, SH
臺大學術典藏	2022-05-21T23:36:07Z	Fringing field induced current coupling in concentric metal-insulator-semiconductor (MIS) tunnel diodes with ultra-thin oxide	Chen, Jen Hao; Chen, Kung Chu; JENN-GWO HWU
國立交通大學	2014-12-08T15:18:02Z	Fringing-Field Effects on High-Resolution Liquid Crystal Microdisplays	Fan-Chiang, Kuan-Hsu; Wu, Shin-Tson; Chen, Shu-Hsia
臺大學術典藏	2018-09-10T04:15:06Z	Fringing-Induced Barrier Lowering (FIBL) Effects of 100nm FD SOI NMOS Devices with High Permittivity Gate Dielectrics and LDD/Sidewall Oxide Spacer	S. C. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T05:26:48Z	Fringing-Induced Narrow-Channel-Effect (FINCE) RElated Capacitance Behavior of Nanometer FD SOI NMOS Devices Using Mesa-Isolation Via 3D Simulation	G. S. Lin; J. B. Kuo; JAMES-B KUO
國立臺灣海洋大學	2016-10	Frist record of the Nephropid genus Acanthacaris Bate, 1888 (Crustacea: Decapoda: Nephropidae) from Taiwan	機構典藏
臺北醫學大學	2002	Frist-trimester screening for Down syndrome in singleton pregnancies achieved by intrauterine insemination versus spontaneously conceived singletons	Lai T.H; Tsai M.S; Chen S.C; Lee F.K; Wei C.F

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