| 國立高雄師範大學 |
2009 |
GaN hydrogen sensor with a Pd-SiO2 mixture forming sensing nanoparticles
|
Jung-Hui Tsai;Shao-Yen ChiuHsuan-Wei HuangKun-Chieh LiangTze-Hsuan HuangKang-Ping LiuJung-Hui TsaiWen-Shiung Lour; 蔡榮輝 |
| 國立臺灣海洋大學 |
2009 |
GaN hydrogen sensor with a Pd-SiO2 mixture forming sensing nanoparticles
|
S. Y. Chiu;H. W. Huang;K. C. Liang;T. H. Huang;K. P. Liu;J. H. Tsai;W. S. Lour |
| 國立臺灣海洋大學 |
2009-02 |
GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticles
|
S.Y. Chiu;H.W. Huang;K.C. Liang;T.H. Huang; K.P. Liu;J.H. Tsai;W.S. Lour |
| 南台科技大學 |
2018-06 |
GaN intermediate band solar cells with Mn-doped absorption layer
|
Ming-Lun Lee;Feng-Wen Huang;Po-Cheng Chen;Jinn-Kong Sheu |
| 國立成功大學 |
2018-06-5 |
GaN intermediate band solar cells with Mn-doped absorption layer
|
Lee;Ming-Lun;Huang;Feng-Wen;Chen;Po-Cheng;Sheu;Jinn-Kong |
| 國立交通大學 |
2016-03-28T00:04:28Z |
GaN Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy
|
Yu, Ing-Song; Liang, Wen-Han; Yang, Dian-Long; Yang, Chung-Pei; Chang, Chun-Pu; Lin, Chun-Ting; Chen, Chun-Chi |
| 國立交通大學 |
2017-04-21T06:55:51Z |
GaN Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy
|
Yu, Ing-Song; Liang, Wen-Han; Yang, Dian-Long; Yang, Chung-Pei; Chang, Chun-Pu; Lin, Chun-Ting; Chen, Chun-Chi |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN metal oxide semiconductor field effect transistors
|
Ren, F; Pearton, SJ; Abernathy, CR; Baca, A; Cheng, P; Shul, RJ; Chu, SNG; Hong, M; Schurman, MJ; Lothian, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
GaN metal oxide semiconductor field effect transistors
|
Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Schurman, M.J.; Lothian, J.R.; MINGHWEI HONG |
| 南台科技大學 |
2003 |
GaN Metal Semiconductor Interface and Its Applications in GaN and InGaN Metal Semiconductor Metal Photodetectors
|
Y. Z. Chiou; Y. K. Su; S. J. Chang; C. H. Chen |
