臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Institution	Date	Title	Author
國立臺灣大學	2004-10	Ge Outdiffusion Effect on Flicker Noise in Strained-Si nMOSFETs	Hua, W.C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.
臺大學術典藏	2018-09-10T04:55:29Z	Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs	Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU
國立臺灣大學	2003	Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum	Peng, Y. H.; Chen, C. C.; Kuan, C. H.; Cheng, H. H.
國立臺灣大學	2003-01	Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum	Peng, Y. H.; Chen, C. C.; Kuan, C. H.; Cheng, H. H.
臺大學術典藏	2003	Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum	CHIEH-HSIUNG KUAN; Cheng, H.H.; Kuan, C.H.; Chen, C.C.; Peng, Y.H.; Peng, Y.H.;Chen, C.C.;Kuan, C.H.;Cheng, H.H.
臺大學術典藏	2018-09-10T04:12:36Z	Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity	Peng, Y.H.; Chen, C.C.; Kuan, C.H.; Cheng, H.H.; CHIEH-HSIUNG KUAN
國立臺灣大學	2002	Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity	Peng, Y.H.; Chen, C.C.; Kuan, C.H.; Cheng, H.H.
國立交通大學	2014-12-08T15:28:41Z	Ge technology beyond Si CMOS	Chin, Albert
國立成功大學	2010-07-01	Ge-doped In2O3和In2Ge2O7奈米線的調控生長及光學性質研究	游智凱; Yu, Chih-Kai
國立成功大學	2010-07-01	Ge-doped In2O3和In2Ge2O7奈米線的調控生長及光學性質研究	游智凱; Yu, Chih-Kai

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