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Showing items 475451-475460 of 2348685 (234869 Page(s) Totally) << < 47541 47542 47543 47544 47545 47546 47547 47548 47549 47550 > >> View [10|25|50] records per page
| 淡江大學 |
1999-05 |
Hopfield neuron based nonlinear constrained programming to fuzzy structural engineering optimization
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Shih,C.J.; Chang,C.C. |
| 元智大學 |
2006-12 |
Hopping Band Acquisition for Multi-band OFDM Ultra-Wideband System
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黃正光; J. H. Deng; Y. M. Chung; S. T. Wan |
| 元智大學 |
2006-12 |
Hopping Band Acquisition for Multi-band OFDM Ultra-Wideband System
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黃正光; J. H. Deng; Y. M. Chung; S. T. Wan |
| 修平科技大學 |
2007 |
Hopping conduction behavior with the Coulomb effects in colossal magnetoresistance materials
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C. H. Lin;S. L. Young;H. Z. Chen;M. C. Kao;Lance Horng |
| 國立彰化師範大學 |
2007-12 |
Hopping Conduction Behavior with the Coulomb Effects in Colossal Magnetoresistance Materials
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Lin, C. H. ; Young, S. L. ; Chen, H. Z. ; Kao, M. C. ; Horng, Lance |
| 國立交通大學 |
2014-12-08T15:30:43Z |
Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
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Chen, Kai-Huang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M. |
| 國立高雄師範大學 |
2013-04 |
Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
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陳榮輝; Rong-Huei Chen;Kai-Huang Chen;Rui Zhang;Ting-Chang Chang;Tsung-Ming Tsai;Kuan-Chang Chang;Jen-Chung Lou;Tai-Fa Young; Chih-Cheng Shih;Cheng-Wei Tung;Yong-En Syu;Simon M. Sze |
| 國立成功大學 |
2013-04 |
Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
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Chen, Kai-Huang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M. |
| 修平科技大學 |
2000 |
Hopping conduction in granular metals
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C.-H. Lin;G. Y. Wu |
| 國立臺灣科技大學 |
2015 |
Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition
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Park, T.-E.;Suh, J.;Seo, D.;Park, J.;Lin, D.-Y.;Huang, Y.-S.;Choi, H.-J.;Wu, J.;Jang, C.;Chang, J. |
Showing items 475451-475460 of 2348685 (234869 Page(s) Totally) << < 47541 47542 47543 47544 47545 47546 47547 47548 47549 47550 > >> View [10|25|50] records per page
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