| 國立交通大學 |
2014-12-08T15:14:39Z |
Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires
|
Lin, Z. C.; Hsieh, W. H.; Lee, C. P.; Suen, Y. W. |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence
|
Ye H.-Y;Chung C.-C;Liu C.W.; Ye H.-Y; Chung C.-C; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence
|
Ye H.-Y;Chung C.-C;Wong I.-H;Lan H.-S;Liu C.W.; Ye H.-Y; Chung C.-C; Wong I.-H; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 國立高雄應用科技大學 |
2011-06 |
Mobility Constraints and Configurations of 3- and 5-bar AKC Mechanisms
|
Lee, Chung-Ching; Loe, Chan-Yu |
| 國立政治大學 |
2000-06 |
Mobility Decisions of Extended Families: Evidence from Traditional Family Structure Households in Taiwan
|
張金鶚;陳淑美;Tsur Somerville |
| 國立臺灣大學 |
2004 |
Mobility dependence on carrier density in a dilute GaAs electron gas in an in-plane magnetic field
|
Lin, Ming-Gu; Huang, Chao-Ping; Liang, C. -T.; Smith, C. G.; Simmons, M. Y.; Ritchie, D. A. |
| 臺大學術典藏 |
2019-12-20T01:18:00Z |
Mobility dependence on carrier density in a dilute GaAs electron gas in an in-plane magnetic field
|
Lin, M.-G.;Huang, C.-P.;Liang, C.-T.;Smith, C.G.;Simmons, M.Y.;Ritchie, D.A.; Lin, M.-G.; Huang, C.-P.; Liang, C.-T.; Smith, C.G.; Simmons, M.Y.; Ritchie, D.A.; CHI-TE LIANG |
| 臺大學術典藏 |
2018-09-10T05:55:37Z |
Mobility detection using everyday GSM traces
|
Sohn, T.; Varshavsky, A.; LaMarca, A.; Chen, M.Y.; Choudhury, T.; Smith, I.; Consolvo, S.; Hightower, J.; Griswold, W.G.; De Lara, E.; YEN-YANG CHEN |
| 國立臺灣大學 |
1999-05 |
Mobility effects in polarization switching of lithium niobates
|
Peng, L.-H.; Lin, Y.-C.; Fang, Y.-C. |
| 臺大學術典藏 |
2018-09-10T07:42:43Z |
Mobility effects in polarization switching of lithium niobates
|
L.-H. Peng,; Y. -C. Lin,; Y. -C. Fang,; LUNG-HAN PENG |
| 臺大學術典藏 |
2022-04-21T23:17:30Z |
Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs
|
Lee, Ming Xuan; Chiu, Jih Chao; Li, Song Ling; Sarkar, Eknath; Chen, Yu Ciao; Yen, Chia Chun; Chen, Tsang Long; Chou, Cheng Hsu; CHEN-WUING LIU |
| 國立東華大學 |
2005 |
Mobility enhancement and breakdown behavior in InP-based heterostructure field-effect transistor
|
Lin,Y. S.; Huang,J. H. |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers
|
Yen C.-C;Tai A.-H;Liu Y.-C;Yeh C.-H;Liu C.W.; Yen C.-C; Tai A.-H; Liu Y.-C; Yeh C.-H; Liu C.W.; CHEE-WEE LIU |
| 國立交通大學 |
2018-08-21T05:53:19Z |
Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer
|
Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kuo, Po-Yi; Yu, Min-Chin; Gan, Kai-Jhih; Chien, Ta-Chun; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:19:27Z |
Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride
|
Lu, TY; Chao, TS |
| 國立交通大學 |
2019-04-02T06:00:17Z |
Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride
|
Lu, TY; Chao, TS |
| 臺大學術典藏 |
2022-01-22T00:04:19Z |
Mobility Enhancement in P-Type SnO Thin-Film Transistors via Ni Incorporation by Co-Sputtering
|
Hsu, Shu Ming; Yang, Cheng En; Lu, Min Hsuan; Lin, Yi Ting; HUNG-WEI YEN; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T15:33:04Z |
Mobility Enhancement in RF-Sputtered MgZnO/ZnO Heterostructure Thin-Film Transistors
|
Wang, B.-S.; Li, Y.-S.; Cheng, I.-C.; Wang, B.-S.; Li, Y.-S.; Cheng, I.-C.; I-CHUN CHENG |
| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers with Quantum Well Structures
|
Tai A.-H;Yen C.-C;Chen T.-L;Chou C.-H;Liu C.W.; Tai A.-H; Yen C.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU |
| 國立交通大學 |
2014-12-08T15:38:39Z |
Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-Vapor. pre-gate oxide cleaning
|
Chao, TS; Lin, YH; Yang, WL |
| 臺大學術典藏 |
2010-03 |
Mobility Enhancement of Polycrystalline MgZnO/ZnO Thin Film Layer with Modulation Doping and Polarization Effect
|
Lin, Tzer-Shen; Chiu, Kuo-Chuang; Huang, Chih-I; Chin, Huai-An; Wu, Yuh-Renn; Cheng, I-Chun; Chen, Jian Z.; Chiu, Kuo-Chuang; Lin, Tzer-Shen; Huang, Chih-I; Chin, Huai-An; Wu, Yuh-Renn; Cheng, I-Chun; Chen, Jian Z. |
| 國立臺灣大學 |
2010-03 |
Mobility Enhancement of Polycrystalline MgZnO/ZnO Thin Film Layer with Modulation Doping and Polarization Effect
|
Huang, Chih-I; Chin, Huai-An; Wu, Yuh-Renn; Cheng, I-Chun; Chen, Jian Z.; Chiu, Kuo-Chuang; Lin, Tzer-Shen |
| 國立中山大學 |
2005 |
Mobility enhancement of polycrystalline-Si thin-film transistor using nanowire channels by pattern-dependent metal-induced lateral crystallization
|
Y.C. Wu;T.C. Chang;P.T. Liu;Y.C. Wu;C.W. Chou;C.Y. Chang |
| 國立交通大學 |
2014-12-08T15:18:12Z |
Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
|
Wu, YC; Chang, TC; Liu, PT; Chou, CW; Tu, CH; Lou, JC; Chang, CY |
| 臺大學術典藏 |
2018-09-10T09:22:34Z |
Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
|
Huang, S.-H.; Lu, T.-M.; Lu, S.-C.; Lee, C.-H.; Liu, C.W.; Tsui, D.C.; CHEE-WEE LIU |
