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Showing items 587376-587385 of 2349128 (234913 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:39:44Z |
MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
|
Kuo, HC; Chang, YS; Lin, CF; Lu, TC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:32Z |
MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
|
Chang, YA; Chu, JT; Ko, CT; Kuo, HC; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:10Z |
MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
|
Kuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC |
| 國立成功大學 |
2003 |
MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates
|
Chang, S. J.; Su, Y. K.; Lin, Y. C.; Chuang, R. W.; Chang, C. S.; �Sheu, �Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H. |
| 國立成功大學 |
2008-08 |
MOCVD growth of InN on Si(111) with various buffer layers
|
Huang, C. C.; Chuang, R. W.; Chang, Shoou-Jinn; Lin, J. C.; Cheng, Y. C.; Lin, Web-Jen |
| 國立中山大學 |
1988 |
MOCVD Growth of InP on Si by Using a GaAs Buffer Layer
|
M.K. Lee;D.S. Wuu;H.H. Tung;K.Y. Yu;K.C. Huang |
| 國立成功大學 |
2021-12-21 |
MOCVD 反應器之熱流場計算及磊晶均勻性分析
|
楊仕寬; Yang, Shih-Kuan |
| 國立交通大學 |
2014-12-12T02:13:36Z |
MOCVD 成長 GaAs 太陽電池研究
|
葉庭弼; Ting-Be Yeh; 李威儀; Dr. Wei-I Lee |
| 國立成功大學 |
2023-07-13 |
MOCVD 載盤機械性質檢測與結構可靠度評估
|
黃萱婷; Huang, Hsuan-Ting |
| 國立交通大學 |
2014-12-12T02:43:34Z |
MOCVD之氮化鎵/p型氮化鎵薄膜沉積製程化學反應場模擬分析
|
龔柏丞; Kung, Po-Cheng; 鄭泗東; Cheng,Stone |
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